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SI2301BDS 数据表(PDF) 4 Page - Vishay Siliconix |
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SI2301BDS 数据表(HTML) 4 Page - Vishay Siliconix |
4 / 9 page www.vishay.com 4 Document Number: 72066 S11-2044-Rev. F, 17-Oct-11 Vishay Siliconix Si2301BDS This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage TJ = 150 °C VSD - Source-to-Drain Voltage (V) 10 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 25 °C 1 - 0.2 - 0.1 0.0 0.1 0.2 0.3 0.4 - 50 - 25 0 25 50 75 100 125 150 TJ - Temperature (°C) ID = 250 µA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 1234 5 VGS - Gate-to-Source Voltage (V) ID = 2.8 A Time (s) TA = 25 °C 10 8 6 4 2 0 0.01 0.1 1 10 100 1000 Safe Operating Area Square Wave Pulse Duration (s) VDS - Drain-to-Source Voltage (V) 100 1 0.1 1 10 100 0.01 10 0.1 10 µs 100 µs 1 ms 10 ms 100 ms TA = 25 °C Single Pulse DC, 100 s, 10 s, 1 s RDS(on)* Limited by * VGS minimum VGS at which RDS(on) is specified |
类似零件编号 - SI2301BDS |
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类似说明 - SI2301BDS |
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