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SI1902CDL-T1-GE3 数据表(PDF) 6 Page - Vishay Siliconix

部件名 SI1902CDL-T1-GE3
功能描述  Dual N-Channel 20 V (D-S) MOSFET
Download  11 Pages
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

SI1902CDL-T1-GE3 数据表(HTML) 6 Page - Vishay Siliconix

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Document Number: 67876
S11-2306-Rev. B, 21-Nov-11
Vishay Siliconix
Si1902CDL
New Product
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for
Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67876.
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Foot
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse


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