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ADRF6701 数据表(PDF) 5 Page - Analog Devices |
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ADRF6701 数据表(HTML) 5 Page - Analog Devices |
5 / 36 page Data Sheet ADRF6702 Rev. B | Page 5 of 36 Parameter Test Conditions/Comments Min Typ Max Unit BASEBAND INPUTS IP, IN, QP, QN pins I and Q Input DC Bias Level 400 500 600 mV Bandwidth POUT ≈ −7 dBm, RF flatness of IQ modulator output calibrated out 0.5 dB 350 MHz 3 dB 750 MHz Differential Input Impedance 920 Ω Differential Input Capacitance 1 pF LOGIC INPUTS CLK, DATA, LE, ENOP, LOSEL Input High Voltage, VINH 1.4 3.3 V Input Low Voltage, VINL 0 0.7 V Input Current, IINH/IINL 0.1 μA Input Capacitance, CIN 5 pF TEMPERATURE SENSOR VPTAT voltage measured at MUXOUT Output Voltage TA = 25 °C, RL ≥10 kΩ (LO buffer disabled) 1.64 V Temperature Coefficient TA = −40 °C to +85°C, RL ≥10 kΩ 3.9 mV/ °C POWER SUPPLIES VCC1, VCC2, VCC3, VCC4, VCC5, VCC6, VCC7 Voltage Range 4.75 5 5.25 V Supply Current Normal Tx mode (PLL and IQMOD enabled, LO buffer disabled) 240 mA Tx mode using external LO input (internal VCO/PLL disabled) 130 mA Tx mode with LO buffer enabled 290 mA Power-down mode 22 μA 1 The figure of merit (FOM) is computed as phase noise (dBc/Hz) – 10log10(fPFD) – 20log10(fLO/fPFD). The FOM was measured across the full LO range, with fREF = 80 MHz, fREF power = 10 dBm (500 V/μs slew rate) with a 40 MHz fPFD. The FOM was computed at 50 kHz offset. |
类似零件编号 - ADRF6701 |
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类似说明 - ADRF6701 |
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