KSD526 datasheet(1/4 Pages) FAIRCHILD

部件名	KSD526

功能描述	Power Amplifier Applications

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制造商	FAIRCHILD [Fairchild Semiconductor]

网页	http://www.fairchildsemi.com

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Rev. A, February 2000

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings T

C=25°C unless otherwise noted

Electrical Characteristics T

C=25°C unless otherwise noted

hFE Classification

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

80

V

VCEO

Collector-Emitter Voltage

80

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current

4

A

IB

Base Current

0.4

A

PC

Collector Dissipation ( TC=25°C)

30

W

TJ

Junction Temperature

150

°C

TSTG

Storage Temperature

- 55 ~ 150

°C

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

ICBO

Collector Cut-off Current

VCB = 80V, IE = 0

30

µA

IEBO

Emitter Cut-off Current

VEB = 5V, IC = 0

100

µA

BVCEO

Collector-Emitter Breakdown Voltage

IC = 50mA, IB = 0

80

V

BVEBO

Emitter-Base Breakdown Voltage

IE = 10mA, IC = 0

5

V

hFE1

hFE2

DC Current Gain

VCE = 50V, IC = 0.5A

VCE = 5V, IC = 3A

40

15

50

240

VCE(sat)

Collector-Emitter Saturation Voltage

IC = 3A, IB = 0.3A

0.45

1.5

V

VBE(on)

Base-Emitter ON Voltage

VCE = 5V, IC = 3A

1

1.5

V

fT

Current Gain Bandwidth Product

VCE = 5V, IC = 0.5A

3

8

MHz

Cob

Collector Output Capacitance

VCB = 10V, IE = 0, f = 1MHz

90

pF

Classification

R

O

Y

hFE

40 ~ 80

70 ~ 140

120 ~ 240

KSD526

Power Amplifier Applications

• Complement to KSB596

1.Base

2.Collector

3.Emitter

1

TO-220

类似零件编号 - KSD526

制造商	部件名	数据表	功能描述
Fairchild Semiconductor	KSD526	182Kb / 4P	NPN Epitaxial Silicon Transistor
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Inchange Semiconductor ...	KSD526	145Kb / 2P	isc Silicon NPN Power Transistor
Foshan Blue Rocket Elec...	KSD526	923Kb / 6P	Silicon NPN transistor in a TO-220 Plastic Package.

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