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KSD526 数据表(PDF) 1 Page - Fairchild Semiconductor |
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KSD526 数据表(HTML) 1 Page - Fairchild Semiconductor |
1 / 4 page ©2000 Fairchild Semiconductor International Rev. A, February 2000 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T C=25°C unless otherwise noted Electrical Characteristics T C=25°C unless otherwise noted hFE Classification Symbol Parameter Value Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current 4 A IB Base Current 0.4 A PC Collector Dissipation ( TC=25°C) 30 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut-off Current VCB = 80V, IE = 0 30 µA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 100 µA BVCEO Collector-Emitter Breakdown Voltage IC = 50mA, IB = 0 80 V BVEBO Emitter-Base Breakdown Voltage IE = 10mA, IC = 0 5 V hFE1 hFE2 DC Current Gain VCE = 50V, IC = 0.5A VCE = 5V, IC = 3A 40 15 50 240 VCE(sat) Collector-Emitter Saturation Voltage IC = 3A, IB = 0.3A 0.45 1.5 V VBE(on) Base-Emitter ON Voltage VCE = 5V, IC = 3A 1 1.5 V fT Current Gain Bandwidth Product VCE = 5V, IC = 0.5A 3 8 MHz Cob Collector Output Capacitance VCB = 10V, IE = 0, f = 1MHz 90 pF Classification R O Y hFE 40 ~ 80 70 ~ 140 120 ~ 240 KSD526 Power Amplifier Applications • Complement to KSB596 1.Base 2.Collector 3.Emitter 1 TO-220 |
类似零件编号 - KSD526 |
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类似说明 - KSD526 |
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