H5PS5182GFRS5J datasheet(21/64 Pages) HYNIX

部件名	H5PS5182GFRS5J

功能描述	512Mb DDR2 SDRAM

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制造商	HYNIX [Hynix Semiconductor]

网页	http://www.skhynix.com/kor/main.do

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21 / 64 page

Rev.1.7 / Feb. 2013

21

H5PS5162GFR series

3.5. Input/Output Capacitance

4. Electrical Characteristics & AC Timing Specification

-40℃ ≤ TCASE ≤ 95℃; VDDQ = 1.8 V +/- 0.1V; VDD = 1.8V +/- 0.1V)

Refresh Parameters by Device Density

DDR2 SDRAM speed bins and tRCD, tRP and tRC for corresponding bin

Parameter

Symbol

DDR2- 400

DDR2- 533

DDR2 667

DDR2 800

Units

Min

Max

Min

Max

Min

Max

Input capacitance, CK and CK

CCK

1.0

2.0

1.0

2.0

1.0

2.0

pF

Input capacitance delta, CK and CK

CDCK

x

0.25

x

0.25

x

0.25

pF

Input capacitance, all other input-only pins

CI

1.0

2.0

1.0

2.0

1.0

1.75

pF

Input capacitance delta, all other input-only pins

CDI

x

0.25

x

0.25

x

0.25

pF

Input/output capacitance, DQ, DM, DQS, DQS

CIO

2.5

4.0

2.5

3.5

2.5

3.5

pF

Input/output capacitance delta, DQ, DM, DQS, DQS

CDIO

x

0.5

x

0.5

x

0.5

pF

Parameter

Symbol

256Mb 512Mb 1Gb

2Gb

4Gb

Units

Refresh to Active

/Refresh command time

tRFC

75

105

127.5

195

327.5

ns

Average periodic refresh interval tREFI

-40℃≤ TCASE ≤ 85℃

7.8

us

85℃ < TCASE ≤95℃

3.9

us

Speed

DDR2-800D

DDR2-800E

DDR2-667D

DDR2-533C

DDR2-400B

Units

Bin(CL-tRCD-tRP)

5-5-5

6-6-6

5-5-5

4-4-4

3-3-3

Parameter

min

CAS Latency

5

6

545

tCK

tRCD

12.5

15

ns

tRP

12.5

15

ns

tRAS

45

40

ns

tRC

57.5

60

55

ns

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