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H5PS5182GFRC4J 数据表(PDF) 27 Page - Hynix Semiconductor

部件名 H5PS5182GFRC4J
功能描述  512Mb DDR2 SDRAM
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制造商  HYNIX [Hynix Semiconductor]
网页  http://www.skhynix.com/kor/main.do
标志 HYNIX - Hynix Semiconductor

H5PS5182GFRC4J 数据表(HTML) 27 Page - Hynix Semiconductor

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Rev.1.7 / Feb. 2013
27
H5PS5162GFR series
VREF. In differential mode, these timing relationships are measured relative to the crosspoint of DQS and its comple-
ment, DQS. This distinction in timing methods is guaranteed by design and characterization. Note that when differen-
tial data strobe mode is disabled via the EMRS, the complementary pin, DQS, must be tied externally to VSS through a
20 ohm to 10 K ohm resistor to insure proper operation.
5. AC timings are for linear signal transitions. See System Derating for other signal transitions.
6. These parameters guarantee device behavior, but they are not necessarily tested on each device.
They may be guaranteed by device design or tester correlation.
7. All voltages referenced to VSS.
8. Tests for AC timing, IDD, and electrical (AC and DC) characteristics, may be conducted at nominal reference/
supply voltage levels, but the related specifications and device operation are guaranteed for the full voltage
range specified.
tDS
tDS
tDH
tWPRE
tWPST
tDQSH
tDQSL
DQS
DQS
D
DMin
DQS/
DQ
DM
tDH
Figure -- Data input (write) timing
DMin
DMin
DMin
D
D
D
DQS
VIH(ac)
VIL(ac)
VIH(ac)
VIL(ac)
VIH(dc)
VIL(dc)
VIH(dc)
VIL(dc)
tCH
tCL
CK
CK
CK/CK
DQS/DQS
DQ
DQS
DQS
tRPST
Q
tRPRE
tDQSQmax
tQH
tQH
tDQSQmax
Figure -- Data output (read) timing
Q
Q
Q


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