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H5PS5182GFRE3C 数据表(PDF) 46 Page - Hynix Semiconductor |
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H5PS5182GFRE3C 数据表(HTML) 46 Page - Hynix Semiconductor |
46 / 64 page Rev.1.7 / Feb. 2013 46 H5PS5162GFR series 3.5. Input/Output Capacitance 4. Electrical Characteristics & AC Timing Specification ( -40℃ ≤ TCASE ≤ 95℃; VDDQ = 1.8 V +/- 0.1V; VDD = 1.8V +/- 0.1V) Refresh Parameters by Device Density DDR2 SDRAM speed bins and tRCD, tRP and tRC for corresponding bin Parameter Symbol DDR2- 1066 Units Min Max Input capacitance, CK and CK CCK 1.0 2.0 pF Input capacitance delta, CK and CK CDCK x 0.25 pF Input capacitance, all other input-only pins CI 1.0 1.75 pF Input capacitance delta, all other input-only pins CDI x 0.25 pF Input/output capacitance, DQ, DM, DQS, DQS CIO 2.5 3.5 pF Input/output capacitance delta, DQ, DM, DQS, DQS CDIO x 0.5 pF Parameter Symbol 256Mb 512Mb 1Gb 2Gb 4Gb Units Refresh to Active /Refresh command time tRFC 75 105 127.5 195 327.5 ns Average periodic refresh interval tREFI -40℃≤ TCASE ≤ 85℃ 7.8 7.8 7.8 7.8 7.8 us 85℃ < TCASE ≤95℃ 3.9 3.9 3.9 3.9 3.9 us Speed DDR2-1066 Units Bin(CL-tRCD-tRP) 7-7-7 Parameter min CAS Latency 7tCK tRCD : ACT to RD(A) or WT(A) Delay 13.125 ns tRP : PRE to ACT Delay 13.125 ns tRAS : ACT to PRE Delay 45 min / 70000 max ns tRC : ACT to ACT Delay 58.125 ns tCK(avg) @ CL=7 1.875 min / 7.5 max ns |
类似零件编号 - H5PS5182GFRE3C |
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类似说明 - H5PS5182GFRE3C |
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