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KSB546 数据表(PDF) 2 Page - Fairchild Semiconductor |
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KSB546 数据表(HTML) 2 Page - Fairchild Semiconductor |
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2 / 4 page  ©2000 Fairchild Semiconductor International Rev. A, February 2000 Typical Characteristics Figure 1. Static Characteristic Figure 2. DC current Gain Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance Figure 5. Safe Operating Area Figure 6. Power Derating -0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 -0.0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 IB = -1mA IB = -2mA IB = -3mA IB = -4mA IB = -5mA IB = -6mA IB = -7mA IB = -8mA VCE[V], COLLECTOR-EMITTER VOLTAGE -0.01 -0.1 -1 -10 10 100 1000 VCE = -10V IC[A], COLLECTOR CURRENT -0.01 -0.1 -1 -10 -0.01 -0.1 -1 -10 IC = 10 IB VCE(sat) VBE(sat) IC[A], COLLECTOR CURRENT -1 -10 -100 10 100 1000 f=1MHz IE=0 VCB[V], COLLECTOR-BASE VOLTAGE -10 -100 -0.1 -1 -10 *1ms Thermal limitation 1. Tc=25℃ 2. *single pulse S/B limitation S/B limitation VCE[V], COLLECTOR-EMITTER VOLTAGE 0 25 50 75 100 125 150 0 5 10 15 20 25 30 35 40 TC[ o C], CASE TEMPERATURE |
类似零件编号 - KSB546 |
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类似说明 - KSB546 |
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