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KSB1149 数据表(PDF) 1 Page - Fairchild Semiconductor |
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KSB1149 数据表(HTML) 1 Page - Fairchild Semiconductor |
1 / 4 page ©2000 Fairchild Semiconductor International Rev. A, February 2000 PNP Silicon Darlington Transistor Absolute Maximum Ratings T C=25°C unless otherwise noted * PW ≤10ms, Duty Cycle≤50% Electrical Characteristics T C=25°C unless otherwise noted * Pulse test: PW ≤350µs, duty Cycle≤2% Pulsed hFE Classification Symbol Parameter Value Units VCBO Collector-Base Voltage - 100 V VCEO Collector-Emitter Voltage - 100 V VEBO Emitter-Base Voltage - 8 V IC Collector Current (DC) - 3 A ICP *Collector Current (Pulse) - 5 A PC Collector Dissipation (Ta=25°C) 1.3 W PC Collector Dissipation (TC=25°C) 15 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut-off Current VCB = - 100V, IE = 0 - 10 µA IEBO Emitter Cut-off Current VEB = - 5V, IC = 0 - 2 mA hFE1 hFE2 * DC Current Gain VCE = - 2V, IC = - 1.5A VCE = - 2V, IC = - 3A 2000 1000 20000 VCE(sat) * Collector-Emitter Saturation Voltage IC = - 1.5A, IB = - 1.5mA - 0.9 - 1.2 V VBE(sat) * Base-Emitter Saturation Voltage IC = - 1.5A, IB = - 1.5mA - 1.5 - 2 V tON Turn ON Time VCC = - 40V, IC = - 1.5A IB1 = - IB2 = - 1.5mA RL = 27Ω 0.5 µs tSTG Storage Time 2 µs tF Fall Time 1 µs Classification O Y G hFE1 2000 ~ 5000 4000 ~ 12000 6000 ~ 20000 KSB1149 Low Collector Saturation Voltage Built-in Damper Diode at E-C • High DC Current Gain • High Power Dissipation : PC=1.3W (Ta=25°C) 1 TO-126 1. Emitter 2.Collector 3.Base |
类似零件编号 - KSB1149 |
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类似说明 - KSB1149 |
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