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KSB1149 数据表(PDF) 1 Page - Fairchild Semiconductor

部件名 KSB1149
功能描述  Low Collector Saturation Voltage Built-in Damper Diode at E-C
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制造商  FAIRCHILD [Fairchild Semiconductor]
网页  http://www.fairchildsemi.com
标志 FAIRCHILD - Fairchild Semiconductor

KSB1149 数据表(HTML) 1 Page - Fairchild Semiconductor

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©2000 Fairchild Semiconductor International
Rev. A, February 2000
PNP Silicon Darlington Transistor
Absolute Maximum Ratings T
C=25°C unless otherwise noted
* PW
≤10ms, Duty Cycle≤50%
Electrical Characteristics T
C=25°C unless otherwise noted
* Pulse test: PW
≤350µs, duty Cycle≤2% Pulsed
hFE Classification
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
- 100
V
VCEO
Collector-Emitter Voltage
- 100
V
VEBO
Emitter-Base Voltage
- 8
V
IC
Collector Current (DC)
- 3
A
ICP
*Collector Current (Pulse)
- 5
A
PC
Collector Dissipation (Ta=25°C)
1.3
W
PC
Collector Dissipation (TC=25°C)
15
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
ICBO
Collector Cut-off Current
VCB = - 100V, IE = 0
- 10
µA
IEBO
Emitter Cut-off Current
VEB = - 5V, IC = 0
- 2
mA
hFE1
hFE2
* DC Current Gain
VCE = - 2V, IC = - 1.5A
VCE = - 2V, IC = - 3A
2000
1000
20000
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = - 1.5A, IB = - 1.5mA
- 0.9
- 1.2
V
VBE(sat)
* Base-Emitter Saturation Voltage
IC = - 1.5A, IB = - 1.5mA
- 1.5
- 2
V
tON
Turn ON Time
VCC = - 40V, IC = - 1.5A
IB1 = - IB2 = - 1.5mA
RL = 27Ω
0.5
µs
tSTG
Storage Time
2
µs
tF
Fall Time
1
µs
Classification
O
Y
G
hFE1
2000 ~ 5000
4000 ~ 12000
6000 ~ 20000
KSB1149
Low Collector Saturation Voltage
Built-in Damper Diode at E-C
• High DC Current Gain
• High Power Dissipation : PC=1.3W (Ta=25°C)
1
TO-126
1. Emitter
2.Collector
3.Base


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