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KA5H0380R 数据表(PDF) 5 Page - Fairchild Semiconductor |
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KA5H0380R 数据表(HTML) 5 Page - Fairchild Semiconductor |
5 / 20 page KA5X03XX-SERIES 5 Electrical Characteristics (SenseFET Part) (Ta = 25 °C unless otherwise specified) Note: 1. Pulse test: Pulse width ≤ 300µS, duty ≤ 2% 2. Parameter Symbol Condition Min. Typ. Max. Unit KA5M0365RN, KA5L0365RN Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=50 µA 650 - - V Zero Gate Voltage Drain Current IDSS VDS=Max. Rating, VGS=0V - - 50 µA VDS=0.8Max. Rating, VGS=0V, TC=125 °C - - 200 µA Static Drain-Source on Resistance (Note) RDS(ON) VGS=10V, ID=0.5A - 3.6 4.5 Ω Forward Transconductance (Note) gfs VDS=50V, ID=0.5A 2.0 - - S Input Capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 314.9 - pF Output Capacitance Coss - 47 - Reverse Transfer Capacitance Crss - 9 - Turn On Delay Time td(on) VDD=0.5BVDSS, ID=1.0A (MOSFET switching time is essentially independent of operating temperature) -11.2- nS Rise Time tr - 34 - Turn Off Delay Time td(off) - 28.2 - Fall Time tf - 32 - Total Gate Charge (Gate-Source+Gate-Drain) Qg VGS=10V, ID=1.0A, VDS=0.5BVDSS (MOSFET switching time is essentially independent of operating temperature) 11.93 nC Gate-Source Charge Qgs - 1.95 - Gate-Drain (Miller) Charge Qgd 6.85 S 1 R ---- = |
类似零件编号 - KA5H0380R |
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类似说明 - KA5H0380R |
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