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ISL9N7030BLP3 Datasheet(数据表) 2 Page - Fairchild Semiconductor |
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ISL9N7030BLP3 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 page 
©2002 Fairchild Semiconductor Corporation ISL9N7030BLP3, ISL9N7030BLS3ST Rev. B Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 10) 30 - - V Zero Gate Voltage Drain Current IDSS VDS = 25V, VGS = 0V - - 1 µA VDS = 25V, VGS = 0V, TC = 150 oC - - 250 µA Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA ON STATE SPECIFICATIONS Gate to Source Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA (Figure 9 1 - 3 V Drain to Source On Resistance rDS(ON) ID = 75A, VGS = 10V (Figures 7, 8) - 0.007 0.009 Ω ID = 48A, VGS = 4.5V (Figure 7) - 0.010 0.012 Ω SWITCHING SPECIFICATIONS (VGS = 4.5V) Turn-On Time tON VDD = 15V, ID = 15A VGS = 4.5V, RGS = 6.2Ω (Figures 13, 17, 18) - - 122 ns Turn-On Delay Time td(ON) -15- ns Rise Time tr -67- ns Turn-Off Delay Time td(OFF) -35- ns Fall Time tf -32- ns Turn-Off Time tOFF - - 100 ns SWITCHING SPECIFICATIONS (VGS = 10V) Turn-On Time tON VDD = 15V, ID = 15A, VGS = 10V, RGS = 6.2Ω, (Figures 14, 17, 18) - - 71 ns Turn-On Delay Time td(ON) -8 - ns Rise Time tr -40- ns Turn-Off Delay Time td(OFF) -64- ns Fall Time tf -31- ns Turn-Off Time tOFF - - 142 ns GATE CHARGE SPECIFICATIONS Total Gate Charge at 10V Qg(TOT) VGS = 0V to 10V VDD = 15V, ID = 48A, Ig(REF) = 1.0mA (Figures 12, 15, 16) -45 68 nC Total Gate Charge at 5V Qg(5) VGS = 0V to 5V - 24 37 nC Threshold Gate Charge Qg(TH) VGS = 0V to 1V - 2.6 4.0 nC Gate to Source Gate Charge Qgs -7 - nC Gate to Drain “Miller” Charge Qgd -8 - nC CAPACITANCE SPECIFICATIONS Input Capacitance CISS VDS = 15V, VGS = 0V, f = 1MHz (Figure 11) - 2600 - pF Output Capacitance COSS - 520 - pF Reverse Transfer Capacitance CRSS - 225 - pF Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage VSD ISD = 48A - - 1.25 V ISD = 20A - - 1.0 V Reverse Recovery Time trr ISD = 48A, dISD/dt = 100A/µs- - 26 ns Reverse Recovered Charge QRR ISD = 48A, dISD/dt = 100A/µs- - 14 nC ISL9N7030BLP3, ISL9N7030BLS3ST |
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