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ISL9N7030BLP3 Datasheet(数据表) 7 Page - Fairchild Semiconductor

部件型号  ISL9N7030BLP3
说明  30V, 0.009 Ohm, 75A, N-Channel Logic Level UltraFET Trench Power MOSFETs
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制造商  FAIRCHILD [Fairchild Semiconductor]
网页  http://www.fairchildsemi.com
标志 FAIRCHILD - Fairchild Semiconductor

ISL9N7030BLP3 Datasheet(HTML) 7 Page - Fairchild Semiconductor

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©2002 Fairchild Semiconductor Corporation
ISL9N7030BLP3, ISL9N7030BLS3ST Rev. B
PSPICE Electrical Model
.SUBCKT ISL9N7030BL 2 1 3 ;
rev Dec2000
CA 12 8 1.5e-9
CB 15 14 1.75e-9
CIN 6 8 2.35e-9
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 32.7
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 4.58e-9
LSOURCE 3 7 1.47e-9
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 2.5e-3
RGATE 9 20 3.4
RLDRAIN 2 5 10
RLGATE 1 9 45.8
RLSOURCE 3 7 14.7
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 2.55e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*200),5))}
.MODEL DBODYMOD D (IS = 1.9e-11 N=1.075 RS = 4.2e-3 TRS1 = 9e-4 TRS2 = 1e-6 XTI=2.2 CJO = 1.1e-9 TT = 8e-11 M = 0.49)
.MODEL DBREAKMOD D (RS = 1.7e- 1TRS1 = 1e- 3TRS2 = -8.9e-6)
.MODEL DPLCAPMOD D (CJO = 8.2e-1 0IS = 1e-3 0N = 10 M = 0.45)
.MODEL MMEDMOD NMOS (VTO = 1.9 KP = 3 IS=1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 3.4)
.MODEL MSTROMOD NMOS (VTO = 2.35KP = 90 IS = 1e-30 N= 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 1.6 KP = 0.05 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 34 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 1e- 3TC2 = -7e-7)
.MODEL RDRAINMOD RES (TC1 = 7e-3 TC2 = 1e-5)
.MODEL RSLCMOD RES (TC1 = 1e-3 TC2 = 1e-6)
.MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 1e-6)
.MODEL RVTHRESMOD RES (TC1 = -2.7e-3 TC2 = -1e-5)
.MODEL RVTEMPMOD RES (TC1 = -1.8e- 3TC2 = 1e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.0 VOFF= -0.8)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.8 VOFF= -4.0)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.3 VOFF= 0.2)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.2 VOFF= -0.3)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
18
22
+
-
6
8
+
-
5
51
19
8
+
-
17
18
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
VBAT
RVTHRES
IT
17
18
19
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
11
7
3
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ESLC
RSLC1
10
5
51
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
-
+
-
6
ISL9N7030BLP3, ISL9N7030BLS3ST




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