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ISL9N327AD3ST Datasheet(数据表) 3 Page - Fairchild Semiconductor |
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ISL9N327AD3ST Datasheet(HTML) 3 Page - Fairchild Semiconductor |
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3 page 
©2002 Fairchild Semiconductor Corporation Rev. B, February 2002 Typical Characteristic Figure 1. Normalized Power Dissipation vs Ambient Temperature Figure 2. Maximum Continuous Drain Current vs Case Temperature Figure 3. Normalized Maximum Transient Thermal Impedance Figure 4. Peak Current Capability TC, CASE TEMPERATURE ( oC) 0 0 25 50 75 100 175 0.2 0.4 0.6 0.8 1.0 1.2 125 150 0 5 10 15 20 25 25 50 75 100 125 150 175 TC, CASE TEMPERATURE ( oC) VGS = 10V VGS = 4.5V 0.01 0.1 1 10-4 10-3 10-2 10-1 100 101 10-5 2 t, RECTANGULAR PULSE DURATION (s) NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC PDM t1 t2 0.5 0.2 0.1 0.05 0.01 0.02 DUTY CYCLE - DESCENDING ORDER 10 100 10-5 10-4 10-3 10-2 10-1 100 101 400 t, PULSE WIDTH (s) TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION VGS = 5V TC = 25 oC I = I25 175 - TC 150 FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: VGS = 10V |
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