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ISL9N312AD3 Datasheet(数据表) 4 Page - Fairchild Semiconductor

部件型号  ISL9N312AD3
说明  N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
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制造商  FAIRCHILD [Fairchild Semiconductor]
网页  http://www.fairchildsemi.com
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ISL9N312AD3 Datasheet(HTML) 4 Page - Fairchild Semiconductor

 
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ISL9N312AD3 / ISL9N312AD3ST Rev C
©2002 Fairchild Semiconductor Corporation
Figure 5. Transfer Characteristics
Figure 6. Saturation Characteristics
Figure 7. Drain to Source On Resistance vs Gate
Voltage and Drain Current
Figure 8. Normalized Drain to Source On
Resistance vs Junction Temperature
Figure 9. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 10. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
Typical Characteristic (Continued) T
C = 25°C unless otherwise noted
0
25
50
75
100
123
456
VGS, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
µs
DUTY CYCLE = 0.5% MAX
VDD = 15V
TJ = -55
oC
TJ = 175
oC
TJ = 25
oC
0
25
50
75
100
0
0.5
1.0
1.5
2.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS = 4.5V
PULSE DURATION = 80
µs
VGS = 3V
TC = 25
oC
VGS = 10V
DUTY CYCLE = 0.5% MAX
VGS = 4V
5
10
15
20
25
24
68
10
VGS, GATE TO SOURCE VOLTAGE (V)
ID = 14A
ID = 50A
PULSE DURATION = 80
µs
DUTY CYCLE = 0.5% MAX
ID = 32A
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
200
-40
TJ, JUNCTION TEMPERATURE (
oC)
PULSE DURATION = 80
µs
DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 50A
0.4
0.6
0.8
1.0
1.2
-80
0
40
80
120
160
200
-40
TJ, JUNCTION TEMPERATURE (
oC)
VGS = VDS, ID = 250µA
0.9
1.0
1.1
1.2
-80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE (
oC)
ID = 250µA




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