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ISL9N312AD3 Datasheet(数据表) 4 Page - Fairchild Semiconductor |
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ISL9N312AD3 Datasheet(HTML) 4 Page - Fairchild Semiconductor |
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4 page 
ISL9N312AD3 / ISL9N312AD3ST Rev C ©2002 Fairchild Semiconductor Corporation Figure 5. Transfer Characteristics Figure 6. Saturation Characteristics Figure 7. Drain to Source On Resistance vs Gate Voltage and Drain Current Figure 8. Normalized Drain to Source On Resistance vs Junction Temperature Figure 9. Normalized Gate Threshold Voltage vs Junction Temperature Figure 10. Normalized Drain to Source Breakdown Voltage vs Junction Temperature Typical Characteristic (Continued) T C = 25°C unless otherwise noted 0 25 50 75 100 123 456 VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VDD = 15V TJ = -55 oC TJ = 175 oC TJ = 25 oC 0 25 50 75 100 0 0.5 1.0 1.5 2.0 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 4.5V PULSE DURATION = 80 µs VGS = 3V TC = 25 oC VGS = 10V DUTY CYCLE = 0.5% MAX VGS = 4V 5 10 15 20 25 24 68 10 VGS, GATE TO SOURCE VOLTAGE (V) ID = 14A ID = 50A PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX ID = 32A 0.5 1.0 1.5 2.0 -80 -40 0 40 80 120 160 200 -40 TJ, JUNCTION TEMPERATURE ( oC) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VGS = 10V, ID = 50A 0.4 0.6 0.8 1.0 1.2 -80 0 40 80 120 160 200 -40 TJ, JUNCTION TEMPERATURE ( oC) VGS = VDS, ID = 250µA 0.9 1.0 1.1 1.2 -80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE ( oC) ID = 250µA |
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