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ISL9N310AP3 Datasheet(数据表) 1 Page - Fairchild Semiconductor

部件型号  ISL9N310AP3
说明  N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
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制造商  FAIRCHILD [Fairchild Semiconductor]
网页  http://www.fairchildsemi.com
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ISL9N310AP3 Datasheet(HTML) 1 Page - Fairchild Semiconductor

 
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©2002 Fairchild Semiconductor Corporation
January 2002
Rev. B, January 2002
ISL9N310AP3/ISL9N310AS3ST/ISL9N310AS3
N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Applications
• DC/DC converters
Features
• Fast switching
•rDS(ON) = 0.008Ω (Typ), VGS = 10V
•rDS(ON) = 0.0115Ω (Typ), VGS = 4.5V
•Qg (Typ) = 17nC, VGS = 5V
•Qgd (Typ) = 5.4nC
•CISS (Typ) = 1800pF
MOSFET Maximum Ratings T
A = 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
Parameter
Ratings
Units
VDSS
Drain to Source Voltage
30
V
VGS
Gate to Source Voltage
±20
V
ID
Drain Current
62
A
Continuous (TC = 25
oC, V
GS = 10V)
Continuous (TC = 100
oC, V
GS = 4.5V)
36
A
Continuous (TC = 25
oC, V
GS = 10V, R
θJA = 43
oC/W)
13.5
A
Pulsed
Figure 4
A
PD
Power dissipation
Derate above 25oC
70
0.47
W
W/oC
TJ, TSTG
Operating and Storage Temperature
-55 to 175
oC
RθJC
Thermal Resistance Junction to Case TO-220, TO-262, TO-263
2.14
oC/W
RθJA
Thermal Resistance Junction to Ambient TO-220, TO-262, TO-263
62
oC/W
RθJA
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area
43
oC/W
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
N310AS
ISL9N310AS3ST
TO-263AB
330mm
24mm
800 units
N310AS
ISL9N310AS3
TO-262AA
Tube
N/A
50
N310AP
ISL9N310AP3
TO-220AB
Tube
N/A
50
D
G
S
TO-263AB
TO-220AB
GATE
SOURCE
DRAIN
(FLANGE)
DRAIN
(FLANGE)
DRAIN
SOURCE
GATE
DRAIN
SOURCE
GATE
DRAIN
(FLANGE)
TO-262AA




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