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ISL9N310AP3 Datasheet(数据表) 4 Page - Fairchild Semiconductor

部件型号  ISL9N310AP3
说明  N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
下载  11 Pages
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制造商  FAIRCHILD [Fairchild Semiconductor]
网页  http://www.fairchildsemi.com
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ISL9N310AP3 Datasheet(HTML) 4 Page - Fairchild Semiconductor

 
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©2002 Fairchild Semiconductor Corporation
Rev. B, January 2002
Figure 5. Transfer Characteristics
Figure 6. Saturation Characteristics
Figure 7. Drain to Source On Resistance vs Gate
Voltage and Drain Current
Figure 8. Normalized Drain to Source On
Resistance vs Junction Temperature
Figure 9. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 10. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
Typical Characteristic (Continued)
0
20
40
60
80
100
120
1234
1
VGS, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
µs
DUTY CYCLE = 0.5% MAX
VDD = 15V
TJ = 175
oC
TJ = 25
oC
TJ = -55
oC
0
20
40
60
80
100
120
0
0.5
1.0
1.5
2.0
40
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS = 5V
PULSE DURATION = 80
µs
DUTY CYCLE = 0.5% MAX
VGS = 3V
TC = 25
oC
VGS = 10V
5
10
15
20
25
2468
10
ID = 10A
VGS, GATE TO SOURCE VOLTAGE (V)
ID = 62A
PULSE DURATION = 80
µs
DUTY CYCLE = 0.5% MAX
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
200
-40
-40
40
80
TJ, JUNCTION TEMPERATURE (
oC)
VGS = 10V, ID = 62A
PULSE DURATION = 80
µs
DUTY CYCLE = 0.5% MAX
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-80
0
40
80
120
160
200
-40
0
TJ, JUNCTION TEMPERATURE (
oC)
VGS = VDS, ID = 250µA
0.9
1.0
1.1
1.2
-80
-40
0
40
80
120
160
200
0
TJ, JUNCTION TEMPERATURE (
oC)
ID = 250µA




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