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ISL9N310AP3 Datasheet(数据表) 4 Page - Fairchild Semiconductor |
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ISL9N310AP3 Datasheet(HTML) 4 Page - Fairchild Semiconductor |
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4 page 
©2002 Fairchild Semiconductor Corporation Rev. B, January 2002 Figure 5. Transfer Characteristics Figure 6. Saturation Characteristics Figure 7. Drain to Source On Resistance vs Gate Voltage and Drain Current Figure 8. Normalized Drain to Source On Resistance vs Junction Temperature Figure 9. Normalized Gate Threshold Voltage vs Junction Temperature Figure 10. Normalized Drain to Source Breakdown Voltage vs Junction Temperature Typical Characteristic (Continued) 0 20 40 60 80 100 120 1234 1 VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VDD = 15V TJ = 175 oC TJ = 25 oC TJ = -55 oC 0 20 40 60 80 100 120 0 0.5 1.0 1.5 2.0 40 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 5V PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VGS = 3V TC = 25 oC VGS = 10V 5 10 15 20 25 2468 10 ID = 10A VGS, GATE TO SOURCE VOLTAGE (V) ID = 62A PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 0.5 1.0 1.5 2.0 -80 -40 0 40 80 120 160 200 -40 -40 40 80 TJ, JUNCTION TEMPERATURE ( oC) VGS = 10V, ID = 62A PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -80 0 40 80 120 160 200 -40 0 TJ, JUNCTION TEMPERATURE ( oC) VGS = VDS, ID = 250µA 0.9 1.0 1.1 1.2 -80 -40 0 40 80 120 160 200 0 TJ, JUNCTION TEMPERATURE ( oC) ID = 250µA |
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