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ISL9N308AP3 Datasheet(数据表) 2 Page - Fairchild Semiconductor

部件型号  ISL9N308AP3
说明  N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 8m
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制造商  FAIRCHILD [Fairchild Semiconductor]
网页  http://www.fairchildsemi.com
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ISL9N308AP3 Datasheet(HTML) 2 Page - Fairchild Semiconductor

 
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©2002 Fairchild Semiconductor Corporation
Rev. B, January 2002
Electrical Characteristics T
A = 25°C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics (VGS = 4.5V)
Switching Characteristics (VGS = 10V)
Unclamped Inductive Switching
Drain-Source Diode Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
30
-
-
V
IDSS
Zero Gate Voltage Drain Current
VDS = 25V
-
-
1
µA
VGS = 0V
TC = 150
o
-
-
250
IGSS
Gate to Source Leakage Current
VGS = ±20V
-
-
±100
nA
VGS(TH)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA1
-
3
V
rDS(ON)
Drain to Source On Resistance
ID = 75A, VGS = 10V
-
0.0064
0.008
ID = 48A, VGS = 4.5V
-
0.010
0.012
CISS
Input Capacitance
VDS = 15V, VGS = 0V,
f = 1MHz
-
2600
-
pF
COSS
Output Capacitance
-
520
-
pF
CRSS
Reverse Transfer Capacitance
-
225
-
pF
Qg(TOT)
Total Gate Charge at 10V
VGS = 0V to 10V
VDD = 15V
ID = 48A
Ig = 1.0mA
-45
68
nC
Qg(5)
Total Gate Charge at 5V
VGS = 0V to 5V
-
24
37
nC
Qg(TH)
Threshold Gate Charge
VGS = 0V to 1V
-
2.6
4.0
nC
Qgs
Gate to Source Gate Charge
-
7
-
nC
Qgd
Gate to Drain “Miller” Charge
-
8
-
nC
tON
Turn-On Time
VDD = 15V, ID = 15A
VGS = 4.5V, RGS = 6.2Ω
-
-
122
ns
td(ON)
Turn-On Delay Time
-
15
-
ns
tr
Rise Time
-
67
-
ns
td(OFF)
Turn-Off Delay Time
-
35
-
ns
tf
Fall Time
-
32
-
ns
tOFF
Turn-Off Time
-
-
100
ns
tON
Turn-On Time
VDD = 15V, ID = 14A
VGS = 10V, RGS = 6.2Ω
-
-
71
ns
td(ON)
Turn-On Delay Time
-
8
-
ns
tr
Rise Time
-
40
-
ns
td(OFF)
Turn-Off Delay Time
-
64
-
ns
tf
Fall Time
-
31
-
ns
tOFF
Turn-Off Time
-
-
142
ns
tAV
Avalanche Time
ID = 3.2A, L = 3.0mH
215
-
-
µs
VSD
Source to Drain Diode Voltage
ISD = 48A
-
-
1.25
V
ISD = 20A
-
-
1.0
V
trr
Reverse Recovery Time
ISD = 48A, dISD/dt = 100A/µs-
-
26
ns
QRR
Reverse Recovered Charge
ISD = 48A, dISD/dt = 100A/µs-
-
14
nC




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