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ISL9N308AD3 Datasheet(数据表) 1 Page - Fairchild Semiconductor

部件型号  ISL9N308AD3
说明  N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 8mΩ
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制造商  FAIRCHILD [Fairchild Semiconductor]
网页  http://www.fairchildsemi.com
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ISL9N308AD3 Datasheet(HTML) 1 Page - Fairchild Semiconductor

 
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©2002 Fairchild Semiconductor Corporation
June 2002
ISL9N308AD3 / ISL9N308AD3ST Rev C
ISL9N308AD3 / ISL9N308AD3ST
N-Channel Logic Level UltraFET® Trench Power MOSFETs
30V, 50A, 8m
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Applications
• DC/DC converters
Features
• Fast switching
•rDS(ON) = 0.0064Ω (Typ), VGS = 10V
•rDS(ON) = 0.010Ω (Typ), VGS = 4.5V
•Qg (Typ) = 24nC, VGS = 5V
•Qgd (Typ) = 8nC
•CISS (Typ) = 2600pF
MOSFET Maximum Ratings T
C = 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
Parameter
Ratings
Units
VDSS
Drain to Source Voltage
30
V
VGS
Gate to Source Voltage
±20
V
ID
Drain Current
50
A
Continuous (TC = 25
oC, V
GS = 10V) Note 1
Continuous (TC = 100
oC, V
GS = 4.5V) Note 1
48
A
Continuous (TC = 25
oC, V
GS = 10V, R
θJC = 52
oC/W)
14
A
Pulsed
Figure 4
A
PD
Power dissipation
Derate above 25oC
100
0.67
W
W/oC
TJ, TSTG
Operating and Storage Temperature
-55 to 175
oC
RθJC
Thermal Resistance Junction to Case TO-252, TO-251
1.5
oC/W
RθJA
Thermal Resistance Junction to Ambient TO-252, TO-251
100
oC/W
RθJA
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
52
oC/W
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
N308AD
ISL9N308AD3ST
TO-252AA
330mm
16mm
2500 units
N308AD
ISL9N308AD3
TO-251AA
Tube
N/A
75 units
D
G
S
PWM Optimized
G
S
D
TO-252
D-PAK
(TO-252)
G DS
I-PAK
(TO-251AA)




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