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ISL9N307AP3 Datasheet(数据表) 2 Page - Fairchild Semiconductor |
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ISL9N307AP3 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 page 
©2002 Fairchild Semiconductor Corporation Rev. B, January 2002 Electrical Characteristics T A = 25°C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics (VGS = 4.5V) Switching Characteristics (VGS = 10V) Unclamped Inductive Switching Drain-Source Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 - - V IDSS Zero Gate Voltage Drain Current VDS = 25V - - 1 µA VGS = 0V TC = 150 o - - 250 IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA1 - 3 V rDS(ON) Drain to Source On Resistance ID = 75A, VGS = 10V - 0.006 0.007 Ω ID = 52A, VGS = 4.5V - 0.010 0.0115 CISS Input Capacitance VDS = 15V, VGS = 0V, f = 1MHz - 3000 - pF COSS Output Capacitance - 580 - pF CRSS Reverse Transfer Capacitance - 250 - pF Q g(TOT) Total Gate Charge at 10V VGS = 0V to 10V VDD = 15V ID = 52A Ig = 1.0mA 50 75 nC Qg(5) Total Gate Charge at 5V VGS = 0V to 5V - 28 42 nC Qg(TH) Threshold Gate Charge VGS = 0V to 1V - 3.0 4.5 nC Qgs Gate to Source Gate Charge - 11 - nC Qgd Gate to Drain “Miller” Charge - 10 - nC tON Turn-On Time VDD = 15V, ID = 16A VGS = 4.5V, RGS = 5.0Ω - - 135 ns td(ON) Turn-On Delay Time - 20 - ns tr Rise Time - 70 - ns td(OFF) Turn-Off Delay Time - 40 - ns tf Fall Time - 40 - ns tOFF Turn-Off Time - - 120 ns tON Turn-On Time VDD = 15V, ID = 16A VGS = 10V, RGS = 5.0Ω - - 83 ns td(ON) Turn-On Delay Time - 10 - ns tr Rise Time - 45 - ns td(OFF) Turn-Off Delay Time - 60 - ns tf Fall Time - 35 - ns tOFF Turn-Off Time - - 143 ns tAV Avalanche Time ID = 3.3A, L = 3mH 220 - - µs VSD Source to Drain Diode Voltage ISD = 52A - - 1.25 V ISD = 25A - - 1.0 V trr Reverse Recovery Time ISD = 52A, dISD/dt = 100A/µs- - 26 ns QRR Reverse Recovered Charge ISD = 52A, dISD/dt = 100A/µs- - 13 nC |
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