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ISL9N307AP3 数据表(PDF) 5 Page - Fairchild Semiconductor |
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ISL9N307AP3 数据表(HTML) 5 Page - Fairchild Semiconductor |
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5 / 11 page  ©2002 Fairchild Semiconductor Corporation Rev. B, January 2002 Figure 11. Capacitance vs Drain to Source Voltage Figure 12. Gate Charge Waveforms for Constant Gate Currents Figure 13. Switching Time vs Gate Resistance Figure 14. Switching Time vs Gate Resistance Typical Characteristic (Continued) 1000 0.1 1 10 5000 100 30 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 0V, f = 1MHz CISS === = C GS + CGD COSS ≅≅≅ ≅ C DS + CGD CRSS === = C GD 0 2 4 6 8 10 0 1020 3040 50 Qg, GATE CHARGE (nC) VDD = 15V ID = 75A ID = 50A WAVEFORMS IN DESCENDING ORDER: 0 50 100 250 0 1020304050 RGS, GATE TO SOURCE RESISTANCE (Ω Ω Ω Ω) 200 150 VGS = 4.5V, VDD = 15V, ID = 16A tr td(ON) tf td(OFF) 0 50 100 150 200 0 1020304050 RGS, GATE TO SOURCE RESISTANCE (Ω Ω Ω Ω) 250 300 350 td(OFF) tr td(ON) tf VGS = 10V, VDD = 15V, ID = 16A Test Circuits and Waveforms Figure 15. Unclamped Energy Test Circuit Figure 16. Unclamped Energy Waveforms tP VGS 0.01 Ω L IAS + - VDS VDD RG DUT VARY tP TO OBTAIN REQUIRED PEAK IAS 0V VDD VDS BVDSS tP IAS tAV 0 |
类似零件编号 - ISL9N307AP3 |
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类似说明 - ISL9N307AP3 |
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