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ISL9N307AP3 Datasheet(数据表) 4 Page - Fairchild Semiconductor |
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ISL9N307AP3 Datasheet(HTML) 4 Page - Fairchild Semiconductor |
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4 page 
©2002 Fairchild Semiconductor Corporation Rev. B, January 2002 Figure 5. Transfer Characteristics Figure 6. Saturation Characteristics Figure 7. Drain to Source On Resistance vs Gate Voltage and Drain Current Figure 8. Normalized Drain to Source On Resistance vs Junction Temperature Figure 9. Normalized Gate Threshold Voltage vs Junction Temperature Figure 10. Normalized Drain to Source Breakdown Voltage vs Junction Temperature Typical Characteristic (Continued) 0 50 100 150 12 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 µµµµs DUTY CYCLE = 0.5% MAX VDD = 15V TJ = -55 oC TJ = 175 oC TJ = 25 oC 125 75 25 0 50 100 150 0 0.5 1.0 1.5 2.0 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 3V VGS = 3.5V VGS = 10V VGS = 4.5V PULSE DURATION = 80 µµµµs DUTY CYCLE = 0.5% MAX TC = 25 oC 125 25 75 5 10 15 20 2468 10 VGS, GATE TO SOURCE VOLTAGE (V) ID = 30A ID = 75A PULSE DURATION = 80 µµµµs DUTY CYCLE = 0.5% MAX TC = 25 oC 0.5 1.0 1.5 2.0 -80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE ( oC) VGS = 10V, ID = 75A PULSE DURATION = 80 µµµµs DUTY CYCLE = 0.5% MAX 0.4 0.6 1.0 1.4 -80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE ( oC) VGS = VDS, ID = 250µµ µµA 1.2 0.8 0.9 1.0 1.1 -80 -40 0 40 80 120 160 200 1.2 TJ, JUNCTION TEMPERATURE ( oC) ID = 250µµ µµA |
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