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ISL9N307AP3 Datasheet(数据表) 3 Page - Fairchild Semiconductor |
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ISL9N307AP3 Datasheet(HTML) 3 Page - Fairchild Semiconductor |
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3 page 
©2002 Fairchild Semiconductor Corporation Rev. B, January 2002 Typical Characteristic Figure 1. Normalized Power Dissipation vs Ambient Temperature Figure 2. Maximum Continuous Drain Current vs Case Temperature Figure 3. Normalized Maximum Transient Thermal Impedance Figure 4. Peak Current Capability TC, CASE TEMPERATURE ( oC) 0 0 25 50 75 100 175 0.2 0.4 0.6 0.8 1.0 1.2 125 150 0 20 40 60 80 25 50 75 100 125 150 175 TC, CASE TEMPERATURE ( oC) VGS = 10V VGS = 4.5V 0.01 0.1 1 2 t, RECTANGULAR PULSE DURATION (s) SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθθθθJA x RθθθθJA + TA PDM t1 t2 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.01 0.02 10-5 10-4 10-3 10-2 10-1 100 101 10-5 10-4 10-3 10-2 10-1 100 101 t, PULSE WIDTH (s) 100 1000 50 2000 TC = 25 oC I = I25 175 - TC 150 FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: VGS = 5V TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION VGS = 10V |
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