 |
数据搜索系统，热门电子元器件搜索 |
|
|
数据搜索系统，热门电子元器件搜索 |
|
ISL9N307AD3ST Datasheet(数据表) 5 Page - Fairchild Semiconductor |
|
||||||||||||||||||||||||||||||
ISL9N307AD3ST Datasheet(HTML) 5 Page - Fairchild Semiconductor |
|
|
5 page 
©2002 Fairchild Semiconductor Corporation Rev. B, February 2002 Figure 11. Capacitance vs Drain to Source Voltage Figure 12. Gate Charge Waveforms for Constant Gate Currents Figure 13. Switching Time vs Gate Resistance Figure 14. Switching Time vs Gate Resistance Typical Characteristic (Continued) 100 1000 0.1 1 10 30 5000 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 0V, f = 1MHz CISS = CGS + CGD COSS ≅ CDS + CGD CRSS = CGD 0 2 4 6 8 10 010 20 30 40 Qg, GATE CHARGE (nC) VDD = 15V ID = 50A ID = 28A WAVEFORMS IN DESCENDING ORDER: 50 0 50 100 250 0 1020304050 RGS, GATE TO SOURCE RESISTANCE (Ω) 200 150 VGS = 4.5V, VDD = 15V, ID = 15A tr td(ON) tf td(OFF) 0 50 100 150 200 0 1020304050 RGS, GATE TO SOURCE RESISTANCE (Ω) 250 300 350 td(OFF) tr td(ON) tf VGS = 10V, VDD = 15V, ID = 15A Test Circuits and Waveforms Figure 15. Unclamped Energy Test Circuit Figure 16. Unclamped Energy Waveforms tP VGS 0.01 Ω L IAS + - VDS VDD RG DUT VARY tP TO OBTAIN REQUIRED PEAK IAS 0V VDD VDS BVDSS tP IAS tAV 0 |
Chinese▼
English
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
