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ISL9N306AP3 Datasheet(数据表) 1 Page - Fairchild Semiconductor |
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ISL9N306AP3 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 page 
©2002 Fairchild Semiconductor Corporation February 2002 Rev. B, February 2002 GATE SOURCE DRAIN (FLANGE) ISL9N306AP3/ISL9N306AS3ST N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Applications • DC/DC converters Features • Fast switching •rDS(ON) = 0.0052Ω (Typ), VGS = 10V •rDS(ON) = 0.0085Ω (Typ), VGS = 4.5V •Qg (Typ) = 30nC, VGS = 5V •Qgd (Typ) = 11nC •CISS (Typ) = 3400pF MOSFET Maximum Ratings T A = 25°C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDSS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±20 V ID Drain Current 75 A Continuous (TC = 25 oC, V GS = 10V) Continuous (TC = 100 oC, V GS = 4.5V) 61 A Continuous (TC = 25 oC, V GS = V, R θJC = 43 oC/W) 18 A Pulsed Figure 4 A PD Power dissipation Derate above 25oC 125 0.83 W W/oC TJ, TSTG Operating and Storage Temperature -55 to 175 oC RθJC Thermal Resistance Junction to Case TO-220, TO-263 1.2 oC/W RθJA Thermal Resistance Junction to Ambient TO-220, TO-263 62 oC/W RθJA Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 43 oC/W Device Marking Device Package Reel Size Tape Width Quantity N306AS ISL9N306AS3ST TO-263AB 330mm 24mm 800 units N306AP ISL9N306AP3 TO-220AB Tube N/A 50 units D G S TO-263AB TO-220AB DRAIN SOURCE GATE DRAIN (FLANGE) |
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