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ISL9N306AP3 Datasheet(数据表) 5 Page - Fairchild Semiconductor |
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ISL9N306AP3 Datasheet(HTML) 5 Page - Fairchild Semiconductor |
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5 page 
©2002 Fairchild Semiconductor Corporation Rev. B, February 2002 Figure 11. Capacitance vs Drain to Source Voltage Figure 12. Gate Charge Waveforms for Constant Gate Currents Figure 13. Switching Time vs Gate Resistance Figure 14. Switching Time vs Gate Resistance Typical Characteristic (Continued) 1000 0.1 1 10 5000 100 30 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 0V, f = 1MHz CISS = CGS + CGD COSS ≅ CDS + CGD CRSS = CGD 0 2 4 6 8 10 010 20 30 40 50 60 Qg, GATE CHARGE (nC) VDD = 15V ID = 61A ID = 25A WAVEFORMS IN DESCENDING ORDER: ID = 5A 0 50 100 150 200 250 300 0 1020304050 RGS, GATE TO SOURCE RESISTANCE (Ω) VGS = 4.5V, VDD = 15V, ID = 18A tr td(ON) tf td(OFF) 0 100 200 300 400 500 0 1020304050 RGS, GATE TO SOURCE RESISTANCE (Ω) td(OFF) tr td(ON) tf VGS = 10V, VDD = 15V, ID = 18A Test Circuits and Waveforms Figure 15. Unclamped Energy Test Circuit Figure 16. Unclamped Energy Waveforms tP VGS 0.01 Ω L IAS + - VDS VDD RG DUT VARY tP TO OBTAIN REQUIRED PEAK IAS 0V VDD VDS BVDSS tP IAS tAV 0 |
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