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ISL9N306AP3 Datasheet(数据表) 4 Page - Fairchild Semiconductor |
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ISL9N306AP3 Datasheet(HTML) 4 Page - Fairchild Semiconductor |
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4 page 
©2002 Fairchild Semiconductor Corporation Rev. B, February 2002 Figure 5. Transfer Characteristics Figure 6. Saturation Characteristics Figure 7. Drain to Source On Resistance vs Gate Voltage and Drain Current Figure 8. Normalized Drain to Source On Resistance vs Junction Temperature Figure 9. Normalized Gate Threshold Voltage vs Junction Temperature Figure 10. Normalized Drain to Source Breakdown Voltage vs Junction Temperature Typical Characteristic (Continued) 0 50 100 150 123 45 VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VDD = 15V TJ = -55 oC TJ = 175 oC TJ = 25 oC 0 50 100 150 0 0.5 1.0 1.5 2.0 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 3V VGS = 3.5V VGS = 10V VGS = 4.5V PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX TC = 25 oC 5 10 15 20 25 2468 10 VGS, GATE TO SOURCE VOLTAGE (V) ID = 30A ID = 75A PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX TC = 25 oC ID = 61A 0.5 1.0 1.5 2.0 -80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE ( oC) VGS = 10V, ID = 75A PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 0.2 0.6 1.0 1.4 -80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE ( oC) VGS = VDS, ID = 250µA 0.9 1.0 1.1 -80 -40 0 40 80 120 160 200 1.2 TJ, JUNCTION TEMPERATURE ( oC) ID = 250µA |
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