 |
数据搜索系统，热门电子元器件搜索 |
|
|
数据搜索系统，热门电子元器件搜索 |
|
ISL9N306AD3 Datasheet(数据表) 2 Page - Fairchild Semiconductor |
|
||||||||||||||||||||||||||||||
ISL9N306AD3 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
|
|
2 page 
©2003 Fairchild Semiconductor Corporation ISL9N306AD3 / ISL9N306AD3ST Rev. B2 Electrical Characteristics T A = 25°C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics (VGS = 4.5V) Switching Characteristics (VGS = 10V) Unclamped Inductive Switching Drain-Source Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 - - V IDSS Zero Gate Voltage Drain Current VDS = 25V - - 1 µA VGS = 0V TC = 150 o -- 250 IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA1 - 3 V rDS(ON) Drain to Source On Resistance ID = 50A, VGS = 10V - 0.0052 0.0060 Ω ID = 50A, VGS = 4.5V - 0.0085 0.0095 CISS Input Capacitance VDS = 15V, VGS = 0V, f = 1MHz -3400 - pF COSS Output Capacitance - 650 - pF CRSS Reverse Transfer Capacitance - 300 - pF Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V VDD = 15V ID = 50A Ig = 1.0mA -60 90 nC Qg(5) Total Gate Charge at 5V VGS = 0V to 5V - 30 45 nC Qg(TH) Threshold Gate Charge VGS = 0V to 1V - 3.0 4.5 nC Qgs Gate to Source Gate Charge - 10 - nC Qgd Gate to Drain “Miller” Charge - 11 - nC tON Turn-On Time VDD = 15V, ID = 16A VGS = 4.5V, RGS = 4.3Ω -- 131 ns td(ON) Turn-On Delay Time - 16 - ns tr Rise Time - 70 - ns td(OFF) Turn-Off Delay Time - 34 - ns tf Fall Time - 30 - ns tOFF Turn-Off Time - - 97 ns tON Turn-On Time VDD = 15V, ID = 16A VGS = 10V, RGS = 4.3Ω - - 80 ns td(ON) Turn-On Delay Time - 10 - ns tr Rise Time - 43 - ns td(OFF) Turn-Off Delay Time - 62 - ns tf Fall Time - 29 - ns tOFF Turn-Off Time - - 137 ns tAV Avalanche Time ID = 30A, L = 200µH428 - - µs VSD Source to Drain Diode Voltage ISD = 50A - - 1.25 V ISD = 25A - - 1.0 V trr Reverse Recovery Time ISD = 50A, dISD/dt = 100A/µs- - 35 ns QRR Reverse Recovered Charge ISD = 50A, dISD/dt = 100A/µs- - 30 nC |
Chinese▼
English
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
