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ISL9N306AD3 Datasheet(数据表) 1 Page - Fairchild Semiconductor |
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ISL9N306AD3 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 page 
©2003 Fairchild Semiconductor Corporation June 2003 ISL9N306AD3 / ISL9N306AD3ST Rev. B2 SOURCE ISL9N306AD3 / ISL9N306AD3ST N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs 30V, 50A, 6m Ω General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Applications • DC/DC converters Features •Fast switching •rDS(ON) = 0.0052Ω (Typ), VGS = 10V •rDS(ON) = 0.0085Ω (Typ), VGS = 4.5V •Qg (Typ) = 30nC, VGS = 5V •Qgd (Typ) = 11nC •CISS (Typ) = 3400pF MOSFET Maximum Ratings T A = 25°C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDSS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±20 V ID Drain Current 50 A Continuous (TC = 25 oC, V GS = 10V) Continuous (TC = 100 oC, V GS = 4.5V) 50 A Continuous (TC = 25 oC, V GS = V, R θJC = 52 oC/W) 16 A Pulsed Figure 4 A PD Power dissipation Derate above 25 oC 125 0.83 W W/ oC TJ, TSTG Operating and Storage Temperature -55 to 175 oC RθJC Thermal Resistance Junction to Case TO-251, TO-252 1.2 oC/W RθJA Thermal Resistance Junction to Ambient TO-251, TO-252 100 oC/W RθJA Thermal Resistance Junction to Ambient TO-252, 1in 2 copper pad area 52 oC/W Device Marking Device Package Reel Size Tape Width Quantity N306AD ISL9N306AD3ST TO-252AA 330mm 16mm 2500 units N306AD ISL9N306AD3 TO-251AA Tube N/A 75 units GATE DRAIN (FLANGE) D G S TO-252 (FLANGE) DRAIN GATE DRAIN SOURCE TO-251 |
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