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ISL9N306AD3 Datasheet(数据表) 5 Page - Fairchild Semiconductor |
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ISL9N306AD3 Datasheet(HTML) 5 Page - Fairchild Semiconductor |
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5 page 
©2003 Fairchild Semiconductor Corporation ISL9N306AD3 / ISL9N306AD3ST Rev. B2 Figure 11. Capacitance vs Drain to Source Voltage Figure 12. Gate Charge Waveforms for Constant Gate Currents Figure 13. Switching Time vs Gate Resistance Figure 14. Switching Time vs Gate Resistance Typical Characteristic (Continued) 1000 0.1 1 10 5000 100 30 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 0V, f = 1MHz CISS = CGS + CGD COSS ≅ CDS + CGD CRSS = CGD 0 2 4 6 8 10 0 10 2030 4050 60 Qg, GATE CHARGE (nC) VDD = 15V ID = 50A ID = 25A WAVEFORMS IN DESCENDING ORDER: ID = 5A 0 50 100 150 200 250 300 0 10 20304050 RGS, GATE TO SOURCE RESISTANCE (Ω) VGS = 4.5V, VDD = 15V, ID = 16A tr td(ON) tf td(OFF) 0 100 200 300 400 500 0 1020304050 RGS, GATE TO SOURCE RESISTANCE (Ω) td(OFF) tr td(ON) tf VGS = 10V, VDD = 15V, ID = 16A Test Circuits and Waveforms Figure 15. Unclamped Energy Test Circuit Figure 16. Unclamped Energy Waveforms tP VGS 0.01 Ω L IAS + - VDS VDD RG DUT VARY tP TO OBTAIN REQUIRED PEAK IAS 0V VDD VDS BVDSS tP IAS tAV 0 |
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