ISL9N304AP3 datasheet(1/11 Pages) FAIRCHILD

部件名	ISL9N304AP3

功能描述	N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 4.5m?

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制造商	FAIRCHILD [Fairchild Semiconductor]

网页	http://www.fairchildsemi.com

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February 2002

Rev. B, February 2002

ISL9N304AP3/ISL9N304AS3ST

N-Channel Logic Level UltraFET® Trench MOSFETs

30V, 75A, 4.5m

Ω

General Description

This device employs a new advanced trench MOSFET

technology and features low gate charge while maintaining

low on-resistance.

Optimized for switching applications, this device improves

the overall efficiency of DC/DC converters and allows

operation to higher switching frequencies.

Applications

• DC/DC converters

Features

• Fast switching

•rDS(ON) = 0.0036Ω (Typ), VGS = 10V

•rDS(ON) = 0.0060Ω (Typ), VGS = 4.5V

•Qg (Typ) = 38nC, VGS = 5V

•Qgd (Typ) = 13nC

•CISS (Typ) = 4075pF

MOSFET Maximum Ratings T

A = 25°C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol

Parameter

Ratings

Units

VDSS

Drain to Source Voltage

30

V

VGS

Gate to Source Voltage

±20

V

ID

Drain Current

75

A

Continuous (TC = 25

oC, V

GS = 10V)

Continuous (TC = 100

oC, V

GS = 4.5V)

74

A

Continuous (TC = 25

oC, V

GS = 10V, R

θJA = 43

oC/W)

20

A

Pulsed

Figure 4

A

PD

Power dissipation

Derate above 25oC

145

0.97

W

W/oC

TJ, TSTG

Operating and Storage Temperature

-55 to 175

oC

RθJC

Thermal Resistance Junction to Case TO-220, TO-263

1.03

oC/W

RθJA

Thermal Resistance Junction to Ambient TO-220, TO-263

62

oC/W

RθJA

Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area

43

oC/W

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

N304AS

ISL9N304AS3ST

TO-263AB

330mm

24mm

800 units

N304AP

ISL9N304AP3

TO-220AB

Tube

N/A

50

D

G

S

TO-263

TO-220

GATE

SOURCE

DRAIN

(FLANGE)

DRAIN

(FLANGE)

DRAIN

SOURCE

GATE

PWM Optimized

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