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ISL9N302AS3ST Datasheet(数据表) 2 Page - Fairchild Semiconductor

部件型号  ISL9N302AS3ST
说明  N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
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制造商  FAIRCHILD [Fairchild Semiconductor]
网页  http://www.fairchildsemi.com
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ISL9N302AS3ST Datasheet(HTML) 2 Page - Fairchild Semiconductor

 
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©2002 Fairchild Semiconductor Corporation
Rev. B1 April 2002
Electrical Characteristics T
A = 25°C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics (VGS =4.5V)
Switching Characteristics (VGS =10V)
Unclamped Inductive Switching
Drain-Source Diode Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
BVDSS
DraintoSourceBreakdown Voltage
ID =250µA, VGS =0V
30
-
-
V
IDSS
Zero Gate Voltage Drain Current
VDS =25V
-
-
1
µA
VGS =0V
TC =150
o
--
250
IGSS
Gate to Source Leakage Current
VGS = ±20V
-
-
±100
nA
VGS(TH)
Gate to Source Threshold Voltage
VGS =VDS,ID =250µA1
-
3
V
rDS(ON)
Drain to Source On Resistance
ID =75A,VGS = 10V
-
0.0019
0.0023
ID =75A,VGS = 4.5V
-
0.0027
0.0033
CISS
Input Capacitance
VDS =15V,VGS =0V,
f= 1MHz
-
11000
-
pF
COSS
Output Capacitance
-
2000
-
pF
CRSS
Reverse Transfer Capacitance
-
900
-
pF
Qg(TOT)
Total GateChargeat 10V
VGS =0V to10V
VDD =15V
ID =75A
Ig =1.0mA
200
300
nC
Qg(5)
Total GateChargeat 5V
VGS =0V to 5V
-
110
165
nC
Qg(TH)
Threshold Gate Charge
VGS = 0V to 1V
-
12
18
nC
Qgs
Gate to Source Gate Charge
-
25
-
nC
Qgd
Gate to Drain “Miller” Charge
-
31
-
nC
tON
Turn-On Time
VDD =15V, ID =28A
VGS =4.5V, RGS =1.5Ω
--
224
ns
td(ON)
Turn-On Delay Time
-
29
-
ns
tr
Rise Time
-
120
-
ns
td(OFF)
Turn-Off Delay Time
-
45
-
ns
tf
Fall Time
-
34
-
ns
tOFF
Turn-Off Time
-
-
119
ns
tON
Turn-On Time
VDD =15V, ID =28A
VGS =10V, RGS =1.5Ω
--
204
ns
td(ON)
Turn-On Delay Time
-
16
-
ns
tr
Rise Time
-
120
-
ns
td(OFF)
Turn-Off Delay Time
-
70
-
ns
tf
Fall Time
-
30
-
ns
tOFF
Turn-Off Time
-
-
150
ns
tAV
Avalanche Time
ID = 7.2A, L = 3.0mH
480
-
-
µs
VSD
Source to Drain Diode Voltage
ISD = 75A
-
-
1.25
V
ISD = 40A
-
-
1.0
V
trr
Reverse Recovery Time
ISD =75A,dISD/dt = 100A/µs-
-
42
ns
QRR
Reverse Recovered Charge
ISD =75A,dISD/dt = 100A/µs-
-
34
nC




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