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ISL9N302AS3ST Datasheet(数据表) 2 Page - Fairchild Semiconductor |
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ISL9N302AS3ST Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 page 
©2002 Fairchild Semiconductor Corporation Rev. B1 April 2002 Electrical Characteristics T A = 25°C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics (VGS =4.5V) Switching Characteristics (VGS =10V) Unclamped Inductive Switching Drain-Source Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Units BVDSS DraintoSourceBreakdown Voltage ID =250µA, VGS =0V 30 - - V IDSS Zero Gate Voltage Drain Current VDS =25V - - 1 µA VGS =0V TC =150 o -- 250 IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA VGS(TH) Gate to Source Threshold Voltage VGS =VDS,ID =250µA1 - 3 V rDS(ON) Drain to Source On Resistance ID =75A,VGS = 10V - 0.0019 0.0023 Ω ID =75A,VGS = 4.5V - 0.0027 0.0033 CISS Input Capacitance VDS =15V,VGS =0V, f= 1MHz - 11000 - pF COSS Output Capacitance - 2000 - pF CRSS Reverse Transfer Capacitance - 900 - pF Qg(TOT) Total GateChargeat 10V VGS =0V to10V VDD =15V ID =75A Ig =1.0mA 200 300 nC Qg(5) Total GateChargeat 5V VGS =0V to 5V - 110 165 nC Qg(TH) Threshold Gate Charge VGS = 0V to 1V - 12 18 nC Qgs Gate to Source Gate Charge - 25 - nC Qgd Gate to Drain “Miller” Charge - 31 - nC tON Turn-On Time VDD =15V, ID =28A VGS =4.5V, RGS =1.5Ω -- 224 ns td(ON) Turn-On Delay Time - 29 - ns tr Rise Time - 120 - ns td(OFF) Turn-Off Delay Time - 45 - ns tf Fall Time - 34 - ns tOFF Turn-Off Time - - 119 ns tON Turn-On Time VDD =15V, ID =28A VGS =10V, RGS =1.5Ω -- 204 ns td(ON) Turn-On Delay Time - 16 - ns tr Rise Time - 120 - ns td(OFF) Turn-Off Delay Time - 70 - ns tf Fall Time - 30 - ns tOFF Turn-Off Time - - 150 ns tAV Avalanche Time ID = 7.2A, L = 3.0mH 480 - - µs VSD Source to Drain Diode Voltage ISD = 75A - - 1.25 V ISD = 40A - - 1.0 V trr Reverse Recovery Time ISD =75A,dISD/dt = 100A/µs- - 42 ns QRR Reverse Recovered Charge ISD =75A,dISD/dt = 100A/µs- - 34 nC |
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