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ISL9N302AS3ST Datasheet(数据表) 1 Page - Fairchild Semiconductor |
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ISL9N302AS3ST Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 page 
©2002 Fairchild Semiconductor Corporation April 2002 Rev. B1,April 2002 ISL9N302AS3ST N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Applications • DC/DC converters Features • Fast switching •rDS(ON) =0.0019Ω (Typ), VGS =10V •rDS(ON) =0.0027Ω (Typ), VGS =4.5V •Qg (Typ) = 110nC, VGS =5V •Qgd (Typ) = 31nC •CISS (Typ) = 11000pF MOSFET Maximum Ratings T A = 25°C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDSS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±20 V ID Drain Current 75 A Continuous (TC =25 oC, V GS =10V) Continuous (TC =100 oC, V GS =4.5V) 75 A Continuous (TC =25 oC, V GS =10V, R θJA =43 oC/W) 28 A Pulsed Figure 4 A PD Power dissipation Derate above 25 oC 345 2.3 W W/ oC TJ,TSTG Operating and Storage Temperature -55 to 175 oC RθJC Thermal Resistance Junction to Case TO-263 0.43 oC/W RθJA Thermal Resistance Junction to Ambient TO-263 62 oC/W RθJA Thermal Resistance Junction to Ambient TO-263, 1in 2 copper pad area 43 oC/W Device Marking Device Package Reel Size Tape Width Quantity N302AS ISL9N302AS3ST TO-263AB 330mm 24mm 800 units D G S TO-263AB GATE SOURCE DRAIN (FLANGE) |
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