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ISL9N302AS3ST Datasheet(数据表) 1 Page - Fairchild Semiconductor

部件型号  ISL9N302AS3ST
说明  N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
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制造商  FAIRCHILD [Fairchild Semiconductor]
网页  http://www.fairchildsemi.com
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ISL9N302AS3ST Datasheet(HTML) 1 Page - Fairchild Semiconductor

 
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©2002 Fairchild Semiconductor Corporation
April 2002
Rev. B1,April 2002
ISL9N302AS3ST
N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Applications
• DC/DC converters
Features
• Fast switching
•rDS(ON) =0.0019Ω (Typ), VGS =10V
•rDS(ON) =0.0027Ω (Typ), VGS =4.5V
•Qg (Typ) = 110nC, VGS =5V
•Qgd (Typ) = 31nC
•CISS (Typ) = 11000pF
MOSFET Maximum Ratings T
A = 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
Parameter
Ratings
Units
VDSS
Drain to Source Voltage
30
V
VGS
Gate to Source Voltage
±20
V
ID
Drain Current
75
A
Continuous (TC =25
oC, V
GS =10V)
Continuous (TC =100
oC, V
GS =4.5V)
75
A
Continuous (TC =25
oC, V
GS =10V, R
θJA =43
oC/W)
28
A
Pulsed
Figure 4
A
PD
Power dissipation
Derate above 25
oC
345
2.3
W
W/
oC
TJ,TSTG
Operating and Storage Temperature
-55 to 175
oC
RθJC
Thermal Resistance Junction to Case TO-263
0.43
oC/W
RθJA
Thermal Resistance Junction to Ambient TO-263
62
oC/W
RθJA
Thermal Resistance Junction to Ambient TO-263, 1in
2 copper pad area
43
oC/W
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
N302AS
ISL9N302AS3ST
TO-263AB
330mm
24mm
800 units
D
G
S
TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)




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