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ISL9N302AS3ST Datasheet(数据表) 4 Page - Fairchild Semiconductor |
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ISL9N302AS3ST Datasheet(HTML) 4 Page - Fairchild Semiconductor |
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4 page 
©2002 Fairchild Semiconductor Corporation Rev. B1 April 2002 Figure 5. Transfer Characteristics Figure 6. Saturation Characteristics Figure 7. DraintoSource OnResistance vs Gate Voltage and Drain Current Figure 8. Normalized Drain to Source On Resistance vs Junction Temperature Figure 9. Normalized Gate Threshold Voltage vs Junction Temperature Figure 10. Normalized Drain to Source Breakdown Voltage vs Junction Temperature Typical Characteristic (Continued) 0 25 50 75 100 125 150 1.5 2.0 2.5 3.0 3.5 VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VDD =15V TJ =-55 oC TJ =175 oC TJ =25 oC 0 25 50 75 100 125 150 0.5 1.0 1.5 2.0 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS =4.5V PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VGS =3.5V TC =25 oC VGS = 10V VGS =3V 0 0 2 4 6 8 10 24 68 10 VGS, GATE TO SOURCE VOLTAGE (V) ID =75A ID = 10A PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE ( oC) VGS = 10V, ID = 75A PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE ( oC) VGS =VDS,ID = 250µA 0.9 1.0 1.1 1.2 -80 -40 0 40 80 120 160 200 TJ , JUNCTION TEMPERATURE ( oC) ID = 250µA |
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