 |
数据搜索系统，热门电子元器件搜索 |
|
|
数据搜索系统，热门电子元器件搜索 |
|
ISL9N302AP3 Datasheet(数据表) 2 Page - Fairchild Semiconductor |
|
||||||||||||||||||||||||||||||
ISL9N302AP3 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
|
|
2 page 
©2002 Fairchild Semiconductor Corporation Rev. B January 2002 Electrical Characteristics T A = 25°C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics (VGS = 4.5V) Switching Characteristics (VGS = 10V) Unclamped Inductive Switching Drain-Source Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 - - V IDSS Zero Gate Voltage Drain Current VDS = 25V - - 1 µA VGS = 0V TC = 150 o - - 250 IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA1 - 3 V rDS(ON) Drain to Source On Resistance ID = 75A, VGS = 10V - 0.0019 0.0025 Ω ID = 75A, VGS = 4.5V - 0.0027 0.0033 CISS Input Capacitance VDS = 15V, VGS = 0V, f = 1MHz - 11000 - pF COSS Output Capacitance - 2000 - pF CRSS Reverse Transfer Capacitance - 900 - pF Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V VDD = 15V ID = 75A Ig = 1.0mA 200 300 nC Qg(5) Total Gate Charge at 5V VGS = 0V to 5V - 110 165 nC Qg(TH) Threshold Gate Charge VGS = 0V to 1V - 12 18 nC Qgs Gate to Source Gate Charge - 25 - nC Qgd Gate to Drain “Miller” Charge - 31 - nC tON Turn-On Time VDD = 15V, ID = 28A VGS = 4.5V, RGS = 1.5Ω - - 224 ns td(ON) Turn-On Delay Time - 29 - ns tr Rise Time - 120 - ns td(OFF) Turn-Off Delay Time - 45 - ns tf Fall Time - 34 - ns tOFF Turn-Off Time - - 119 ns tON Turn-On Time VDD = 15V, ID = 28A VGS = 10V, RGS = 1.5Ω - - 204 ns td(ON) Turn-On Delay Time - 16 - ns tr Rise Time - 120 - ns td(OFF) Turn-Off Delay Time - 70 - ns tf Fall Time - 30 - ns tOFF Turn-Off Time - - 150 ns tAV Avalanche Time ID = 7.2A, L = 3.0mH 480 - - µs VSD Source to Drain Diode Voltage ISD = 75A - - 1.25 V ISD = 40A - - 1.0 V trr Reverse Recovery Time ISD = 75A, dISD/dt = 100A/µs- - 42 ns QRR Reverse Recovered Charge ISD = 75A, dISD/dt = 100A/µs- - 34 nC |
Chinese▼
English
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
