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ISL9N302AP3 Datasheet(数据表) 4 Page - Fairchild Semiconductor

部件型号  ISL9N302AP3
说明  N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
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制造商  FAIRCHILD [Fairchild Semiconductor]
网页  http://www.fairchildsemi.com
标志 FAIRCHILD - Fairchild Semiconductor

ISL9N302AP3 Datasheet(HTML) 4 Page - Fairchild Semiconductor

  ISL9N302AP3 数据表 HTML 1Page - Fairchild Semiconductor ISL9N302AP3 数据表 HTML 2Page - Fairchild Semiconductor ISL9N302AP3 数据表 HTML 3Page - Fairchild Semiconductor ISL9N302AP3 数据表 HTML 4Page - Fairchild Semiconductor ISL9N302AP3 数据表 HTML 5Page - Fairchild Semiconductor ISL9N302AP3 数据表 HTML 6Page - Fairchild Semiconductor ISL9N302AP3 数据表 HTML 7Page - Fairchild Semiconductor ISL9N302AP3 数据表 HTML 8Page - Fairchild Semiconductor ISL9N302AP3 数据表 HTML 9Page - Fairchild Semiconductor Next Button
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©2002 Fairchild Semiconductor Corporation
Rev. B January 2002
Figure 5. Transfer Characteristics
Figure 6. Saturation Characteristics
Figure 7. Drain to Source On Resistance vs Gate
Voltage and Drain Current
Figure 8. Normalized Drain to Source On
Resistance vs Junction Temperature
Figure 9. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 10. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
Typical Characteristic (Continued)
0
25
50
75
100
125
150
1.5
2.0
2.5
3.0
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
µs
DUTY CYCLE = 0.5% MAX
VDD = 15V
TJ = -55
oC
TJ = 175
oC
TJ = 25
oC
0
25
50
75
100
125
150
0.5
1.0
1.5
2.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS = 4.5V
PULSE DURATION = 80
µs
DUTY CYCLE = 0.5% MAX
VGS = 3.5V
TC = 25
oC
VGS = 10V
VGS = 3V
0
0
2
4
6
8
10
2468
10
VGS, GATE TO SOURCE VOLTAGE (V)
ID = 75A
ID = 10A
PULSE DURATION = 80
µs
DUTY CYCLE = 0.5% MAX
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE (
oC)
VGS = 10V, ID = 75A
PULSE DURATION = 80
µs
DUTY CYCLE = 0.5% MAX
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE (
oC)
VGS = VDS, ID = 250µA
0.9
1.0
1.1
1.2
-80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE (
oC)
ID = 250µA




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