TP0610K-T1-E3 datasheet(1/8 Pages) VISHAY

部件名	TP0610K-T1-E3

功能描述	P-Channel 60 V (D-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

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Vishay Siliconix

TP0610K

Document Number: 71411

S10-1476-Rev. H, 05-Jul-10

www.vishay.com

1

P-Channel 60 V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFET

•

High-Side Switching

•

Low On-Resistance: 6



•

Low Threshold: - 2 V (typ.)

•

Fast Swtiching Speed: 20 ns (typ.)

•

Low Input Capacitance: 20 pF (typ.)

•

2000 V ESD Protection

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Drivers: Relays, Solenoids, Lamps, Hammers, Display,

Memories, Transistors, etc.

•

Battery Operated Systems

•

Power Supply Converter Circuits

•

Solid-State Relays

BENEFITS

•

Ease in Driving Switches

•

Low Offset (Error) Voltage

•

Low-Voltage Operation

•

High-Speed Circuits

•

Easily Driven without Buffer

Notes:

a. Surface mounted on FR4 board.

b. Pulse width limited by maximum junction temperature.

PRODUCT SUMMARY

VDS (V)

RDS(on) ()VGS(th) (V)

ID (mA)

- 60

6 at VGS = - 10 V

- 1 to - 3

- 185

Marking Code: 6Kwll

6K = Part Number Code for TP0610K

w = Week Code

ll = Lot Traceability

TO-236

(SOT-23)

Top View

2

1

S

D

G

3

Ordering Information: TP0610K-T1-E3 (Lead (Pb)-free)

TP0610K-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

- 60

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Currenta

TA = 25 °C

ID

- 185

mA

TA = 100 °C

- 115

Pulsed Drain Currentb

IDM

- 800

Power Dissipationa

TA = 25 °C

PD

350

mW

TA = 100 °C

140

Maximum Junction-to-Ambienta

RthJA

350

°C/W

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

类似零件编号 - TP0610K-T1-E3

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VBsemi Electronics Co.,...	TP0610K-T1-E3	987Kb / 7P	P-Channel 60 V (D-S) MOSFET

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