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IRF740B Datasheet(数据表) 1 Page - Fairchild Semiconductor

部件型号  IRF740B
说明  400V N-Channel MOSFET
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制造商  FAIRCHILD [Fairchild Semiconductor]
网页  http://www.fairchildsemi.com
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©2001 Fairchild Semiconductor Corporation
November 2001
Rev. A, November 2001
IRF740B/IRFS740B
400V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies and
electronic lamp ballasts based on half bridge.
Features
• 10A, 400V, RDS(on) = 0.54Ω @VGS = 10 V
• Low gate charge ( typical 41 nC)
• Low Crss ( typical 35 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings T
C = 25°C unless otherwise noted
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
IRF740B
IRFS740B
Units
VDSS
Drain-Source Voltage
400
V
ID
Drain Current
- Continuous (TC = 25°C)
10
10 *
A
- Continuous (TC = 100°C)
6.3
6.3 *
A
IDM
Drain Current
- Pulsed
(Note 1)
40
40 *
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
450
mJ
IAR
Avalanche Current
(Note 1)
10
A
EAR
Repetitive Avalanche Energy
(Note 1)
13.4
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
5.5
V/ns
PD
Power Dissipation (TC = 25°C)
134
44
W
- Derate above 25°C
1.08
0.35
W/°C
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C
Symbol
Parameter
IRF740B
IRFS740B
Units
RθJC
Thermal Resistance, Junction-to-Case
0.93
2.86
°C/W
RθCS
Thermal Resistance, Case-to-Sink
0.5
--
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°C/W
TO-220
IRF Series
G
S
D
S
D
G
TO-220F
IRFS Series
G
S
D




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