2SK2788VYTR-E datasheet(2/7 Pages) RENESAS

部件名	2SK2788VYTR-E

功能描述	Silicon N Channel MOS FET High Speed Power Switching

Download	7 Pages

Scroll/Zoom	100%

制造商	RENESAS [Renesas Technology Corp]

网页	http://www.renesas.com

标志

2 / 7 page

HAT2203C

Preliminary

R07DS0323EJ0500 Rev.5.00

Page 2 of 6

Mar 28, 2011

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Drain to Source breakdown voltage

V(BR)DSS

20

—

V

ID = 10 mA, VGS = 0

Gate to Source breakdown voltage

V(BR)GSS

±12

IG = 100 A, VDS = 0

Gate to Source leak current

IGSS

—

±10

A

VGS = 10 V, VDS = 0

Drain to Source leak current

IDSS

—

1

A

VDS = 20 V, VGS = 0

Gate to Source cutoff voltage

VGS(off)

0.4

—

1.4

V

VDS = 10 V, ID = 1 mA

RDS(on)

—

69

90

m



ID = 1 A, VGS = 4.5 V

Note3

Drain to Source on state resistance

RDS(on)

—

107

150

m



ID = 1 A, VGS = 2.5 V

Note3

Forward transfer admittance

|yfs|

3

4.5

—

S

ID = 1 A, VDS = 10 V

Note3

Input capacitance

Ciss

—

165

—

pF

VDS = 10 V

Output capacitance

Coss

—

50

—

pF

VGS = 0

Reverse transfer capacitance

Crss

—

20

—

pF

f = 1 MHz

Turn - on delay time

td(on)

—

6

—

ns

Rise time

tr

—

5

—

ns

Turn - off delay time

td(off)

—

20

—

ns

Fall time

tf

—

4

—

ns

ID = 1 A

VGS = 10 V

RL = 10 

Rg = 4.7



Total Gate charge

Qg

—

1.8

—

nC

Gate to Source charge

Qgs

—

0.4

—

nC

Gate to Drain charge

Qgd

—

0.4

—

nC

VDD = 10 V

VGS = 4.5 V

ID = 2 A

Body - Drain diode forward voltage

VDF

—

0.8

1.1

V

IF = 2 A, VGS = 0

Note3

Notes: 3. Pulse test

类似零件编号 - 2SK2788VYTR-E

制造商	部件名	数据表	功能描述
Renesas Technology Corp	2SK2788VYTR-E	78Kb / 7P	Silicon N Channel MOS FET High Speed Power Switching

More results

类似说明 - 2SK2788VYTR-E

制造商	部件名	数据表	功能描述
Renesas Technology Corp	H7N0608LD	118Kb / 12P	Silicon N Channel MOS FET High Speed Power Switching
	H5N1503P	81Kb / 7P	Silicon N Channel MOS FET High Speed Power Switching
	RJK6015DPK	107Kb / 7P	Silicon N Channel MOS FET High Speed Power Switching
	H7N0310LD	131Kb / 14P	Silicon N Channel MOS FET High Speed Power Switching
	RJK5013DPE	89Kb / 7P	Silicon N Channel MOS FET High Speed Power Switching
	RJL5014DPK	89Kb / 7P	Silicon N Channel MOS FET High Speed Power Switching
	H5N5006DL	113Kb / 10P	Silicon N Channel MOS FET High Speed Power Switching
	H7N1005LD	145Kb / 11P	Silicon N Channel MOS FET High Speed Power Switching
	HAT2179R	126Kb / 9P	Silicon N Channel MOS FET High Speed Power Switching
	H7N1005DL	139Kb / 11P	Silicon N Channel MOS FET High Speed Power Switching

More results

2SK2788VYTR-E 数据表(PDF) 2 Page - Renesas Technology Corp

2SK2788VYTR-E 数据表(HTML) 2 Page - Renesas Technology Corp

类似零件编号 - 2SK2788VYTR-E

类似说明 - 2SK2788VYTR-E

Html Pages

1 2 3 4 5 6 7

数据表下载

链接网址

2SK2788VYTR-E 数据表(PDF) 2 Page - Renesas Technology Corp

2SK2788VYTR-E 数据表(HTML) 2 Page - Renesas Technology Corp

类似零件编号 - 2SK2788VYTR-E

类似说明 - 2SK2788VYTR-E

Html Pages

1 2 3 4 5 6 7

数据表 下载

链接网址

数据表下载