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STF9NM60N 数据表(PDF) 5 Page - STMicroelectronics |
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STF9NM60N 数据表(HTML) 5 Page - STMicroelectronics |
5 / 16 page STD9NM60N, STF9NM60N, STP9NM60N Electrical characteristics Doc ID 18063 Rev 1 5/16 Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 480 V, ID = 6.5 A RG =4.7 Ω VGS = 10 V (see Figure 17) - 28 23 52.5 26.7 - ns ns ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) - 6.5 26 A A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 6.5 A, VGS = 0 - 1.6 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 6.5 A, di/dt = 100 A/µs VDD = 60 V (see Figure 22) - 264 1.9 14.6 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 6.5 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 22) - 324 2.3 14.2 ns µC A |
类似零件编号 - STF9NM60N |
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类似说明 - STF9NM60N |
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