HUFA76409P3 datasheet(1/10 Pages) FAIRCHILD

部件名	HUFA76409P3

功能描述	17A, 60V, 0.070 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

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制造商	FAIRCHILD [Fairchild Semiconductor]

网页	http://www.fairchildsemi.com

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HUFA76409P3 Rev. B

HUFA76409P3

17A, 60V, 0.070 Ohm, N-Channel, Logic

Level UltraFET® Power MOSFET

Packaging

Symbol

Features

• Ultra Low On-Resistance

-rDS(ON) = 0.062Ω, VGS = 10V

-rDS(ON) = 0.070Ω, VGS = 5V

• Simulation Models

- Temperature Compensated PSPICE® and SABER™

Electrical Models

- Spice and SABER Thermal Impedance Models

- www.fairchildsemi.com

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Switching Time vs RGS Curves

Ordering Information

Absolute Maximum Ratings

TC = 25

oC, Unless Otherwise Specified

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy

of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

JEDEC TO-220AB

DRAIN

(FLANGE)

DRAIN

SOURCE

GATE

HUFA76409P3

D

G

S

PART NUMBER

PACKAGE

BRAND

HUFA76409P3

TO-220AB

76409P

NOTE: When ordering, use the entire part number i.e., HUFA76409P3

HUFA76409P3

UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS

60

V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

60

V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

±16

V

Drain Current

Continuous (TC = 25

oC, V

GS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Continuous (TC = 25

oC, V

GS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Continuous (TC = 135

oC, V

GS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Continuous (TC = 135

oC, V

GS = 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

17

18

8

Figure 4

A

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS

Figures 6, 17, 18

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

49

0.327

W

W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 175

oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

300

260

oC

NOTES:

1. TJ = 25

oC to 150oC.

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Data Sheet

December 2001

类似零件编号 - HUFA76409P3

制造商	部件名	数据表	功能描述
Fairchild Semiconductor	HUFA76409D3	206Kb / 10P	17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
Fairchild Semiconductor	HUFA76409D3S	206Kb / 10P	17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

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类似说明 - HUFA76409P3

制造商	部件名	数据表	功能描述
Fairchild Semiconductor	HUF76409P3	207Kb / 10P	17A, 60V, 0.070 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
Intersil Corporation	HUF76409P3	105Kb / 9P	17A, 60V, 0.070 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
Fairchild Semiconductor	HUF76409D3	206Kb / 10P	17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
Intersil Corporation	HUF76409D3	335Kb / 9P	17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
Fairchild Semiconductor	RFD12N06RLE	215Kb / 10P	17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
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