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AD22151YR 数据表(PDF) 3 Page - Analog Devices |
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AD22151YR 数据表(HTML) 3 Page - Analog Devices |
3 / 8 page REV. A AD22151 –3– PIN CONFIGURATION TOP VIEW (Not to Scale) 8 7 6 5 1 2 3 4 AREA OF SENSITIVITY* TC1 TC2 TC3 GND VCC REF GAIN OUTPUT AD22151 (Not to Scale) 8 7 6 5 1 2 3 4 *SHADED AREA REPRESENTS MAGNETIC FIELD AREA OF SENSITIVITY (20MILS 20MILS) POSITIVE B FIELD INTO TOP OF PACKAGE RESULTS IN A POSITIVE VOLTAGE RESPONSE CIRCUIT OPERATION The AD22151 consists of epi Hall plate structures located at the center of the die. The Hall plates are orthogonally sampled by commutation switches via a differential amplifier. The two amplified Hall signals are synchronously demodulated to provide a resultant offset cancellation (see Figure 3). The demodulated signal passes through a noninverting amplifier to provide final gain and drive capability. The frequency at which the output signal is refreshed is 50 kHz. TEMPERATURE – C 140 –40 120 100 80 60 40 20 0 –20 –0.004 –0.003 –0.002 –0.001 0 0.001 0.002 0.003 0.004 0.005 Figure 3. Relative Quiescent Offset vs. Temperature TEMPERATURE DEPENDENCIES The uncompensated gain temperature coefficient (GTCU) of the AD22151 is the result of fundamental physical properties asso- ciated with silicon bulk Hall plate structures. Low doped Hall plates operated in current bias mode exhibit a temperature relationship determined by the action of scattering mechanisms and doping concentration. The relative value of sensitivity to magnetic field can be altered by the application of mechanical force upon silicon. The mecha- nism is principally the redistribution of electrons throughout the PIN FUNCTION DESCRIPTIONS Pin No. Description Connection 1Temperature Compensation 1 Output 2Temperature Compensation 2 Output 3Temperature Compensation 3 Input/Output 4Ground 5Output Output 6 Gain Input 7Reference Output 8 Positive Power Supply “valleys” of the silicon crystal. Mechanical force on the sensor is attributable to package-induced stress. The package material acts to distort the encapsulated silicon, altering the Hall cell gain by ±2% and GTCU by ±200 ppm. Figure 4 shows the typical GTCU characteristic of the AD22151. This is the observable alteration of gain with respect to tempera- ture with Pin 3 (TC3) held at a constant 2.5 V (uncompensated). If a permanent magnet source used in conjunction with the sensor also displays an intrinsic TC (BTC), it will require factoring into the total temperature compensation of the sensor assembly. Figures 5 and 6 represent typical overall temperature/gain per- formance for a sensor and field combination (BTC = –200 ppm). Figure 5 is the total drift in volts over a –40 ∞C to +150∞C tem- perature range with respect to applied field. Figure 6 represents typical percentage gain variation from 25 ∞C. Figures 7 and 8 show similar data for a BTC = –2000 ppm. TEMPERATURE – C 14 –4 –40 10 60 110 160 12 4 2 0 –2 10 6 8 –6 Figure 4. Uncompensated Gain Variation (from 25 ∞C) vs. Temperature |
类似零件编号 - AD22151YR |
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类似说明 - AD22151YR |
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