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SI7454DP-T1-E3 数据表(PDF) 1 Page - Vishay Siliconix |
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SI7454DP-T1-E3 数据表(HTML) 1 Page - Vishay Siliconix |
1 / 7 page Vishay Siliconix Si7454DP Document Number: 71618 S09-0227-Rev. D, 09-Feb-09 www.vishay.com 1 N-Channel 100-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFETs • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile • PWM Optimized for Fast Switching • 100 % Rg Tested APPLICATIONS • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V, Full-/Half-Bridge DC/DC • Industrial and 42 V Automotive PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) 100 0.034 at VGS = 10 V 7.8 0.040 at VGS = 6.0 V 7.2 1 2 3 4 5 6 7 8 S S S G D D D D 6.15 mm 5.15 mm PowerPAK® SO-8 Bottom View Ordering Information: Si7454DP-T1-E3 (Lead (Pb)-free) Si7454DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET G D S Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See Solder Profile ( www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) a TA = 25 °C ID 7.8 5.0 A TA = 85 °C 5.7 3.6 Pulsed Drain Current IDM 30 Avalanche Current L = 0.1 mH IAS 25 Single Avalanche Energy (Duty Cycle ≤ 1 %) EAS 31 mJ Continuous Source Current (Diode Conduction)a IS 4.0 1.6 A Maximum Power Dissipationa TA = 25 °C PD 4.8 1.9 W TA = 85 °C 2.6 1.0 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)b, c 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta t ≤ 10 s RthJA 21 26 °C/W Steady State 55 65 Maximum Junction-to-Case (Drain) Steady State RthJC 1.6 2 |
类似零件编号 - SI7454DP-T1-E3 |
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类似说明 - SI7454DP-T1-E3 |
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