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Si4404DY-T1-GE3 数据表(PDF) 1 Page - Vishay Siliconix |
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Si4404DY-T1-GE3 数据表(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Vishay Siliconix Si4404DY Document Number: 71247 S09-0228-Rev. H, 09-Feb-09 www.vishay.com 1 N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % Rg Tested PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) 30 0.0065 at VGS = 10 V 23 0.008 at VGS = 4.5 V 17 SO-8 SD SD SD GD 5 6 7 8 Top View 2 3 4 1 Ordering Information: Si4404DY-T1-E3 (Lead (Pb)-free) Si4404DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET G D S Notes: a. Surface Mounted on 1" x 1" FR4 board. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) a TA = 25 °C ID 23 15 A TA = 70 °C 19 12 Pulsed Drain Current (10 µs Pulse Width) IDM 60 Continuous Source Current (Diode Conduction)a IS 2.9 1.3 Maximum Power Dissipationa TA = 25 °C PD 3.5 1.6 W TA = 70 °C 2.2 1 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta t ≤ 10 s RthJA 29 35 °C/W Steady State 67 80 Maximum Junction-to-Foot (Drain) Steady State RthJF 13 16 |
类似零件编号 - Si4404DY-T1-GE3 |
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类似说明 - Si4404DY-T1-GE3 |
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