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SI2333DDS-T1-GE3 数据表(PDF) 6 Page - Vishay Siliconix |
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SI2333DDS-T1-GE3 数据表(HTML) 6 Page - Vishay Siliconix |
6 / 10 page www.vishay.com 6 Document Number: 63861 S12-0801-Rev. A, 16-Apr-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Vishay Siliconix Si2333DDS For technical support, please contact: pmostechsupport@vishay.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63861. Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 0 0 0 1 0 1 1 10-1 10-4 100 0.2 0.1 Square WavePulse Duration (s) 1 0.1 0.01 Duty Cycle = 0.5 Single Pulse 0.02 0.05 0.001 t1 t2 Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 175 °C/W 3. TJM -TA =PDMZthJA(t) t1 t2 4. Surface Mounted Normalized Thermal Transient Impedance, Junction-to-Foot 1 0.1 0.01 0.2 Duty Cycle = 0.5 Square WavePulse Duration (s) Single Pulse 0.1 10-3 10-2 1 10-1 10-4 0.02 0.05 |
类似零件编号 - SI2333DDS-T1-GE3 |
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类似说明 - SI2333DDS-T1-GE3 |
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