 |
数据搜索系统，热门电子元器件搜索 |
|
|
数据搜索系统，热门电子元器件搜索 |
|
HUF76145P3 Datasheet(数据表) 3 Page - Fairchild Semiconductor |
|
||||||||||||||||||||||||||||||
HUF76145P3 Datasheet(HTML) 3 Page - Fairchild Semiconductor |
|
|
3 page 
©2001 Fairchild Semiconductor Corporation HUF76145P3, HUF76145S3S Rev. B SWITCHING SPECIFICATIONS (VGS = 10V) Turn-On Time tON VDD = 15V, ID ≅ 75A, RL = 0.20Ω, VGS = 10V, RGS = 2.2Ω (Figure 16) - - 110 ns Turn-On Delay Time td(ON) -16 - ns Rise Time tr -57 - ns Turn-Off Delay Time td(OFF) -53 - ns Fall Time tf - 38 - ns Turn-Off Time tOFF - - 135 ns GATE CHARGE SPECIFICATIONS Total Gate Charge Qg(TOT) VGS = 0V to 10V VDD = 15V, ID ≅ 75A, RL = 0.20Ω Ig(REF) = 1.0mA (Figure 14) - 130 156 nC Gate Charge at 5V Qg(5) VGS = 0V to 5V - 73 88 nC Threshold Gate Charge Qg(TH) VGS = 0V to 1V - 4.65 5.6 nC Gate to Source Gate Charge Qgs - 12.30 - nC Gate to Drain “Miller” Charge Qgd - 40.00 - nC CAPACITANCE SPECIFICATIONS Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 13) - 4900 - pF Output Capacitance COSS - 2520 - pF Reverse Transfer Capacitance CRSS - 560 - pF Electrical Specifications TA = 25 oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage VSD ISD = 75A - - 1.25 V Reverse Recovery Time trr ISD = 75A, dISD/dt = 100A/µs - - 115 ns Reverse Recovered Charge QRR ISD = 75A, dISD/dt = 100A/µs - - 255 nC Typical Performance Curves FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE TA, AMBIENT TEMPERATURE ( oC) 0 025 50 75 100 150 0.2 0.4 0.6 0.8 1.0 1.2 125 0 20 40 60 80 25 50 75 100 125 150 175 TC, CASE TEMPERATURE ( oC) VGS = 10V VGS = 4.5V HUF76145P3, HUF76145S3S |
Chinese▼
English
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
