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HUF76143P3 Datasheet(数据表) 5 Page - Fairchild Semiconductor |
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HUF76143P3 Datasheet(HTML) 5 Page - Fairchild Semiconductor |
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5 page 
©2003 Fairchild Semiconductor Corporation HUF76143P3, HUF76143S3S Rev. B1 FIGURE 7. TRANSFER CHARACTERISTICS FIGURE 8. SATURATION CHARACTERISTICS FIGURE 9. SOURCE TO DRAIN ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT FIGURE 10. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE Typical Performance Curves (Continued) 0 50 100 150 200 0123 45 VGS, GATE TO SOURCE VOLTAGE (V) -40oC 25oC PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VDD = 15V 150oC 0 50 100 150 200 0 1234 5 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 3.5V PULSE DURATION = 80 µs TC = 25 oC VGS = 3V VGS = 5V VGS = 4V VGS = 10V DUTY CYCLE = 0.5% MAX 3 6 9 2 15 246 8 10 VGS, GATE TO SOURCE VOLTAGE (V) ID = 75A ID = 50A ID = 25A PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 0.8 1.0 1.2 1.4 1.6 -60 0 60 120 180 0.7 TJ, JUNCTION TEMPERATURE ( oC) PULSE DURATION = 80 µs VGS = 10V, ID = 75A DUTY CYCLE = 0.5% MAX 0.6 0.8 1.0 1.2 -60 0 60 120 180 0.5 TJ, JUNCTION TEMPERATURE ( oC) VGS = VDS, ID = 250µA 1.0 1.1 1.2 -60 0 60 120 180 0.9 TJ, JUNCTION TEMPERATURE ( oC) ID = 250µA HUF76143P3, HUF76143S3S |
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