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HUF76139P3 Datasheet(数据表) 2 Page - Fairchild Semiconductor |
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HUF76139P3 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 page 
©2003 Fairchild Semiconductor Corporation HUF76139P3, HUF76139S3S Rev. B1 Absolute Maximum Ratings TC = 25 oC, Unless Otherwise Specified UNITS Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS 30 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR 30 V Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 V Drain Current Continuous (TC = 25 oC, V GS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TC = 100 oC, V GS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TC = 100 oC, V GS = 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 75 64 61 Figure 4 A A A Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Figures 6, 17, 18 Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165 1.35 W W/oC Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -40 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25 oC to 150oC. Electrical Specifications TA = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 12) 30 - - V Zero Gate Voltage Drain Current IDSS VDS = 25V, VGS = 0V - - 1 µA VDS = 25V, VGS = 0V, TC = 150 oC- - 250 µA Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA ON STATE SPECIFICATIONS Gate to Source Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA (Figure 11) 1 - 3 V Drain to Source On Resistance rDS(ON) ID = 75A, VGS = 10V (Figures 9, 10) - 0.0065 0.0075 Ω ID =64A, VGS = 5V (Figure 9) - 0.0082 0.010 Ω ID = 61A, VGS = 4.5V (Figure 9,) - 0.009 0.011 Ω THERMAL SPECIFICATIONS Thermal Resistance Junction to Case RθJC (Figure 3) - - 0.74 oC/W Thermal Resistance Junction to Ambient RθJA TO-220AB, TO-263AB - - 62 oC/W SWITCHING SPECIFICATIONS (VGS = 4.5V) Turn-On Time tON VDD = 15V, ID ≅ 61A, RL = 0.246Ω, VGS = 4.5V, RGS = 4.5Ω (Figures 15, 21, 22) -- 255 ns Turn-On Delay Time td(ON) -20 - ns Rise Time tr -150 - ns Turn-Off Delay Time td(OFF) -30 - ns Fall Time tf -40 - ns Turn-Off Time tOFF -- 105 ns HUF76139P3, HUF76139S3S3 |
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