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HUF76139P3 Datasheet(数据表) 2 Page - Fairchild Semiconductor

部件型号  HUF76139P3
说明  75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
下载  11 Pages
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制造商  FAIRCHILD [Fairchild Semiconductor]
网页  http://www.fairchildsemi.com
标志 FAIRCHILD - Fairchild Semiconductor

HUF76139P3 Datasheet(HTML) 2 Page - Fairchild Semiconductor

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©2003 Fairchild Semiconductor Corporation
HUF76139P3, HUF76139S3S Rev. B1
Absolute Maximum Ratings
TC = 25
oC, Unless Otherwise Specified
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
30
V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
30
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
V
Drain Current
Continuous (TC = 25
oC, V
GS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Continuous (TC = 100
oC, V
GS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Continuous (TC = 100
oC, V
GS = 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
75
64
61
Figure 4
A
A
A
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Figures 6, 17, 18
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
165
1.35
W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-40 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25
oC to 150oC.
Electrical Specifications
TA = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BVDSS
ID = 250µA, VGS = 0V (Figure 12)
30
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS = 25V, VGS = 0V
-
-
1
µA
VDS = 25V, VGS = 0V, TC = 150
oC-
-
250
µA
Gate to Source Leakage Current
IGSS
VGS = ±20V
-
-
±100
nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250µA (Figure 11)
1
-
3
V
Drain to Source On Resistance
rDS(ON)
ID = 75A, VGS = 10V (Figures 9, 10)
-
0.0065
0.0075
ID =64A, VGS = 5V (Figure 9)
-
0.0082
0.010
ID = 61A, VGS = 4.5V (Figure 9,)
-
0.009
0.011
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
RθJC
(Figure 3)
-
-
0.74
oC/W
Thermal Resistance Junction to Ambient
RθJA
TO-220AB, TO-263AB
-
-
62
oC/W
SWITCHING SPECIFICATIONS (VGS = 4.5V)
Turn-On Time
tON
VDD = 15V, ID ≅ 61A,
RL = 0.246Ω, VGS = 4.5V,
RGS = 4.5Ω
(Figures 15, 21, 22)
--
255
ns
Turn-On Delay Time
td(ON)
-20
-
ns
Rise Time
tr
-150
-
ns
Turn-Off Delay Time
td(OFF)
-30
-
ns
Fall Time
tf
-40
-
ns
Turn-Off Time
tOFF
--
105
ns
HUF76139P3, HUF76139S3S3




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