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HUF76139P3 Datasheet(数据表) 5 Page - Fairchild Semiconductor |
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HUF76139P3 Datasheet(HTML) 5 Page - Fairchild Semiconductor |
5 page ![]() ©2003 Fairchild Semiconductor Corporation HUF76139P3, HUF76139S3S Rev. B1 FIGURE 7. TRANSFER CHARACTERISTICS FIGURE 8. SATURATION CHARACTERISTICS FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT FIGURE 10. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE Typical Performance Curves (Continued) 0 40 80 120 160 01 23456 VGS, GATE TO SOURCE VOLTAGE (V) VDD = 15V -40oC 25oC 150oC PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 0 40 80 120 160 01 234 5 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 3V VGS = 3.5V VGS = 4V VGS = 5V VGS = 4.5V VGS = 10V PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX TC = 25 oC 6 8 10 12 14 24 68 10 VGS, GATE TO SOURCE VOLTAGE (V) ID = 25A ID = 75A ID = 50A PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 0.5 1.0 1.5 2.0 -60 0 60 120 180 TJ, JUNCTION TEMPERATURE ( oC) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VGS = 10V, ID = 75A 0.4 0.6 0.8 1.0 1.2 -60 0 60 120 180 VGS = VDS, ID = 250µA TJ, JUNCTION TEMPERATURE ( oC) 0.9 1.0 1.1 1.2 -60 0 60 120 180 ID = 250µA TJ, JUNCTION TEMPERATURE ( oC) HUF76139P3, HUF76139S3S |