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HUF76132P3 Datasheet(数据表) 5 Page - Fairchild Semiconductor |
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HUF76132P3 Datasheet(HTML) 5 Page - Fairchild Semiconductor |
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5 page 
©2003 Fairchild Semiconductor Corporation HUF76132P3, HUF76132S3S Rev. C1 FIGURE 7. TRANSFER CHARACTERISTICS FIGURE 8. SATURATION CHARACTERISTICS FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT FIGURE 10. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE Typical Performance Curves Unless Otherwise Specified (Continued) 0 234 5 1 0 20 60 100 VGS, GATE TO SOURCE VOLTAGE (V) 150oC -40oC PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VDD = 15V 120 80 25oC 40 VGS = 4.5V VGS = 4V 012 34 0 20 40 80 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 5V VGS = 10V VGS = 3V 120 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 3.5V 100 60 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX TC = 25 oC 10 12 14 18 6 4 VGS, GATE TO SOURCE VOLTAGE (V) 26 10 8 ID = 75A ID = 25A 8 16 ID = 51A PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 0.6 0.8 1.0 1.4 -60 0 60 120 180 TJ, JUNCTION TEMPERATURE ( oC) 1.2 1.6 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VGS = 10V, ID = 75A -60 0 60 120 180 0.6 0.8 1.2 TJ, JUNCTION TEMPERATURE ( oC) VGS = VDS, ID = 250µA 1.0 1.2 1.1 1.0 0.9 -60 0 60 120 180 TJ, JUNCTION TEMPERATURE ( oC) ID = 250µA HUF76132P3, HUF76132S3S |
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