 |
数据搜索系统，热门电子元器件搜索 |
|
|
数据搜索系统，热门电子元器件搜索 |
|
HUF76129D3 Datasheet(数据表) 5 Page - Fairchild Semiconductor |
|
||||||||||||||||||||||||||||||
HUF76129D3 Datasheet(HTML) 5 Page - Fairchild Semiconductor |
|
|
5 page 
©2003 Fairchild Semiconductor Corporation HUF76129D3, HUF76129D3S Rev. B1 FIGURE 7. TRANSFER CHARACTERISTICS FIGURE 8. SATURATION CHARACTERISTICS FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT FIGURE 10. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE Typical Performance Curves (Continued) 02 3 1 0 15 30 45 VGS, GATE TO SOURCE VOLTAGE (V) 150oC -55oC 25oC PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VDD = 15V 60 4 VGS = 4V VGS = 3.5V 0 15 30 012345 45 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 5V VGS = 10V VGS = 4.5V 60 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 3V PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 18 21 24 30 12 4 VGS, GATE TO SOURCE VOLTAGE (V) 26 10 8 ID = 20A ID = 10A ID = 5A 15 27 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 0.6 0.8 1.0 1.2 1.6 -80 0 40 TJ, JUNCTION TEMPERATURE ( oC) 160 1.4 -40 80 120 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VGS = 10V, ID = 20A 0.6 0.7 1.0 1.2 TJ, JUNCTION TEMPERATURE ( oC) VGS = VDS, ID = 250µA 0.9 0.8 1.1 -80 0 40 160 -40 80 120 1.15 1.05 1.00 0.95 0.90 TJ, JUNCTION TEMPERATURE ( oC) ID = 250µA 1.10 -80 0 40 160 -40 80 120 HUF76129D3, HUF76129D3S |
Chinese▼
English
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
